@Article{CL.2025.226.551,
AUTHOR = {M. H. Ibrahim, M. R. Salim, M. Y. Mohd Nor, A. S. Abdullah, A. I. Azmi},
TITLE = {Quaternary chalcogenides as transport layers in solid-state DSSC: a feasibility study},
JOURNAL = {Chalcogenide Letters},
VOLUME = {22},
YEAR = {2025},
NUMBER = {6},
PAGES = {551--560},
URL = {http://www.techscience.com/CL/v22n6/64856},
ISSN = {1584-8663},
ABSTRACT = {Four chalcogenide compounds: copper zinc germanium sulfide (CZGS), copper zinc 
germanium selenide (CZGSe), copper barium tin sulfide (CBTS), and copper manganese tin 
sulfide (CMTS) were proposed as hole transport layer (HTL) in dye-sensitized solar cell 
(DSSC). The DSSC structure comprises fluorine-doped tin oxide (FTO) as the top electrode, 
zinc oxysulfide (ZnOS) as the electron transport layer (ETL), N719 dye as the light absorber, 
chalcogenides as the HTL, and gold (Au) as the back electrode. By utilizing the SCAPS 1-
D simulator, the optimal thicknesses for ZnOS, HTL candidates and N719 dye were 
determined to be 50 nm, 200 nm, and 700 nm, respectively. Among the materials studied, 
CZGSe demonstrated the highest power conversion efficiency (PCE) at 12.11%, followed 
by CZGS and CBTS at 12.02%. In contrast, CMTS exhibited a significantly lower PCE of 
4.25%, indicating its limited suitability for DSSC applications. The DSSC exhibited stable 
performance, with PCE fluctuations constrained within 0 to 0.4%, even as the hole transport 
layer (HTL) varied in thickness between 50 nm and 300 nm. Comparative analysis with 
published simulation and experimental studies supports the promising potential of 
quaternary chalcogenides in solid-state DSSC applications.},
DOI = {10.15251/CL.2025.226.551}
}