@Article{CL.2025.227.593,
AUTHOR = {J. H. Azzawi, Yaseen A. Al-Zahraa, M. A. Abdulmajeed, K. A. Jasim, A. Muravitskaya, A. A. Al-Hamadani, A. H. Al-Dulaimi},
TITLE = {Gamma radiation dose's impact on the energy states and structural properties of Se<sub>70</sub>Ge<sub>20</sub>Sb<sub>10</sub> alloy},
JOURNAL = {Chalcogenide Letters},
VOLUME = {22},
YEAR = {2025},
NUMBER = {7},
PAGES = {593--601},
URL = {http://www.techscience.com/CL/v22n7/64846},
ISSN = {1584-8663},
ABSTRACT = {Four Se<sub>70</sub>Ge<sub>20</sub>Sb<sub>10</sub> alloy samples were prepared using the melt quenching technique. To 
improve the energy states of the mobility gap, the samples were exposed to gamma radiation 
from 60Co source at various doses of 600, 1200, 1500, and 2000 Gy. The electrical 
characteristics were examined both before and after irradiation. The conductivity analysis 
revealed that all of our samples were impacted by gamma radiation. The reorganization of 
the amorphous lattice and the degree of radiation-induced disorder have been involved in 
the changes that occurred in the electrical characteristics of the irradiated samples. All 
irradiated and non-irradiated samples feature three conduction mechanisms at low 
temperatures, where the electrical conductivity is by hopping electrons between local states 
close to the Fermi level, according to the identification of the electrical conduction 
processes. Conduction occurs by transferring electrons between the local levels at the 
conduction and valence bundles' tails at intermediate temperatures. Conduction occurs in 
the transfer of electrons between the extended levels in the conduction and valence bands at 
higher temperatures. It was discovered that all of the local and extended state densities were 
impacted by the gamma radiation exposure and were computed close to the Fermi level.},
DOI = {10.15251/CL.2025.227.593}
}