@Article{CL.2025.228.753,
AUTHOR = {Sh. B. Utamuradova, F. A. Giyasova, M. S. Paizullakhanov, S. Yu. Gerasimenko, M. A. Yuldoshev, S. R. Boydedayev, M. R. Bekchanova},
TITLE = {Investigation of the functional capability of modified silicon-based photodiodes structure},
JOURNAL = {Chalcogenide Letters},
VOLUME = {22},
YEAR = {2025},
NUMBER = {8},
PAGES = {753--764},
URL = {http://www.techscience.com/CL/v22n8/64843},
ISSN = {1584-8663},
ABSTRACT = {Based on the experimental data, the results of the study of photoelectric and gain 
characteristics of modified multi-barrier photodiode Au-nCdS-nSi-pCdTe-Au structures 
are presented, which are obtained by the method of vacuum evaporation in a quasi-closed 
volume by sputtering cadmium sulfide and cadmium telluride layers on a silicon substrate 
with a specific resistance of 607.47 Ohm⋅cm. It is shown that the structures in the passing 
direction of the current at low illumination levels operate as injection photodiodes, and 
also the optical spectral range (0.3÷0.95 μm) covers from the nSi-pCdTe-Au side and 
(1.0÷1.4 μm) from the Au-nCdS-nSi side with a photosensitivity of 0.57 A/W at a 
wavelength of 1310 nm. In addition, the possibility of their application in optical power 
attenuation meters is considered.},
DOI = {10.15251/CL.2025.228.753}
}