TY  - EJOU
AU  - Utamuradova, Sh. B. 
AU  - Giyasova, F. A. 
AU  - Paizullakhanov, M. S. 
AU  - Gerasimenko, S. Yu. 
AU  - Yuldoshev, M. A. 
AU  - Boydedayev, S. R. 
AU  - Bekchanova, M. R. 

TI  - Investigation of the functional capability of modified silicon-based photodiodes structure
T2  - Chalcogenide Letters

PY  - 2025
VL  - 22
IS  - 8
SN  - 1584-8663

AB  - Based on the experimental data, the results of the study of photoelectric and gain 
characteristics of modified multi-barrier photodiode Au-nCdS-nSi-pCdTe-Au structures 
are presented, which are obtained by the method of vacuum evaporation in a quasi-closed 
volume by sputtering cadmium sulfide and cadmium telluride layers on a silicon substrate 
with a specific resistance of 607.47 Ohm⋅cm. It is shown that the structures in the passing 
direction of the current at low illumination levels operate as injection photodiodes, and 
also the optical spectral range (0.3÷0.95 μm) covers from the nSi-pCdTe-Au side and 
(1.0÷1.4 μm) from the Au-nCdS-nSi side with a photosensitivity of 0.57 A/W at a 
wavelength of 1310 nm. In addition, the possibility of their application in optical power 
attenuation meters is considered.
KW  - Photodiode
KW  -  Structure
KW  -  Heterojunction
KW  -  Optical characteristics
KW  -  Optical signal
KW  -  Photosensitivity
KW  -  Power
KW  -  Meter
KW  -  Attenuation

DO  - 10.15251/CL.2025.228.753