@Article{CL.2025.229.797,
AUTHOR = {R. M. Reddy, J. A. Prakash, A. Tonk, S. Karvendhan, G. Sivaraman, D. K. Patel, S. P. Dillibabu, S. Karthikeyan, T. Thirugnanasambandham},
TITLE = {Advanced chalcogenide Ga<sub>₂</sub>S<sub>3</sub> coatings for reducing reflective loss and boosting efficiency in silicon photovoltaics},
JOURNAL = {Chalcogenide Letters},
VOLUME = {22},
YEAR = {2025},
NUMBER = {9},
PAGES = {797--806},
URL = {http://www.techscience.com/CL/v22n9/64832},
ISSN = {1584-8663},
ABSTRACT = {The current situation necessitates advancements in renewable energy as an alternative for 
conventional energy sources. Reflection loss in solar cells is a contributing factor to 
diminish the power conversion efficiency, which can be reduced by employing antireflective 
coatings. The current investigation focuses on improvement in photocurrent generation of 
monocrystalline silicon solar cells by employing Gallium sulfide (Ga<sub>₂</sub>S<sub>3</sub>) as anti-reflective 
coatings (ARC). The RF sputter coating method has been used for Ga<sub>₂</sub>S<sub>3</sub> deposition at 
different coating durations (10, 20, 30, and 40 minutes). The transmittance, reflectance, I-V 
characteristics, electrical properties, and thermal behaviour of the Ga2S3 coatings on m-Si 
cells were analysed to determine the influence of the coatings. The incorporation of Ga2S3 
led to enhanced power conversion efficiencies (PCEs) from the 16.38% to 21.80% under 
open conditions and from 18.58% to 24.33% under closed conditions. The Ga<sub>₂</sub>S<sub>3</sub> coating 
thickness for the GS3 sample was measured at 1.440 µm using FESEM. The minimum 
optical reflectance of 6.56% and maximum transmittance of 93.44% were achieved after 30 
minutes of coating (GS3) within the 300 to 1200 nm wavelength range. The minimum 
electrical resistivity of a GS3 coated sample was measured as 5.33×10<sup>−3</sup>
 Ω-cm. Ga<sub>₂</sub>S<sub>3</sub> coatings serve to reduce reflected losses and improve surface passivation. },
DOI = {10.15251/CL.2025.229.797}
}