TY  - EJOU
AU  - Kumar, Y. B. K. 
AU  - Prasad, S. G. 
AU  - Smitha, A. S. S. 
AU  - Naidu, S. M. 
AU  - Babu, G. S. 
AU  - Bhaskar, P. U. 
AU  - Chalapathi, U. 

TI  - Cu<sub>2</sub>MgSnS<sub>4</sub> thin films: a promising absorber material for next-generation solar cells
T2  - Chalcogenide Letters

PY  - 2025
VL  - 22
IS  - 9
SN  - 1584-8663

AB  - Cu<sub>2</sub>MgSnS<sub>4</sub> thin films have emerged as potential candidates for use in photovoltaic 
applications owing to their direct band gap properties. These quaternary compounds are 
fabricated through the spray pyrolysis method at 175 °C, utilizing two different carrier gases, 
such as air and nitrogen. After pyrolysis, deposited films are annealed at 450 °C for 1 hour. 
Structural analysis confirms the films exhibit a tetragonal kesterite structure. Using nitrogen 
as the carrier gas results in a larger crystallite size, accompanied by a reduction in both the 
dislocation density and microstrain. Raman spectroscopy further validates phase purity. 
Surface morphology analysis indicates a more compact grain structure in films deposited 
under nitrogen. Optical measurements reveal a strong absorption coefficient and a direct 
band gap of approximately 1.55 eV for nitrogen-grown samples. Cu<sub>2</sub>MgSnS<sub>4</sub>-based solar 
cells demonstrate promising optoelectronic characteristics. 
KW  - Cu<sub>2</sub>MgSnS<sub>4</sub>
KW  -  Spray method
KW  -  Carrier gas
KW  -  Structural studies
KW  -  Optical properties

DO  - 10.15251/CL.2025.229.847