@Article{cl.2026.077336,
AUTHOR = {Soheib Dakhelullah Alsahafi},
TITLE = {High-Efficiency Double-Heterojunction Based Dual-Absorber Perovskite Solar Cell via Numerical Optimization},
JOURNAL = {Chalcogenide Letters},
VOLUME = {23},
YEAR = {2026},
NUMBER = {3},
PAGES = {--},
URL = {http://www.techscience.com/CL/v23n3/66869},
ISSN = {1584-8663},
ABSTRACT = {In this study, a novel double-heterojunction perovskite solar cell (DHPSC) with the following structure: FTO/ZnO/CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3−x</sub>Cl<sub>x</sub>/CH<sub>3</sub>NH<sub>3</sub>SnI<sub>3</sub>/p<sup>++</sup>ZnTe/Au was designed. It was optimized using the <i>wxAMPS</i> simulation software. A systematic parametric analysis was performed to investigate the influence of electron transport layer (ETL) ZnO and hole transport layer (HTL) thicknesses on photovoltaic performance. That includes short-circuit current density (<i>J</i><sub>sc</sub>), open-circuit voltage (<i>V</i><sub>oc</sub>), fill factor (FF), and power conversion efficiency (<i>η</i>). The results indicate that once a minimum ZnO thickness is achieved, further increases have a negligible effect on performance. Whereas variations in ZnTe thickness markedly influence <i>V</i><sub>oc</sub> and <i>η</i>. The optimal configuration obtained, comprising a FTO (200 nm)/ZnO (600 nm)/CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3−x</sub>Cl<sub>x</sub> (800 nm)/CH<sub>3</sub>NH<sub>3</sub>SnI<sub>3</sub> (800 nm)/ZnTe (350 nm), achieved a <i>V</i><sub>oc</sub> of 1.996 V, <i>J</i><sub>sc</sub> of 20.61 mA/cm<sup>2</sup>, FF of 93.11%, and 38.24%. Quantum efficiency analysis revealed superior spectral response, exceeding 95% across the visible spectrum. These findings demonstrate the potential of a thickness-optimized DHPSC device for achieving high performance, providing a pathway for future experimental validation and fabrication.},
DOI = {10.32604/cl.2026.077336}
}