@Article{cl.2026.079159,
AUTHOR = {Yuzhe Gu, Wenwu Wang, Guanggen Zeng, Xia Hao, Lili Wu, Jingquan Zhang},
TITLE = {Attempting Doping Activation via Rapid Thermal Annealing in As-Doped Polycrystalline CdSeTe Solar Cells},
JOURNAL = {Chalcogenide Letters},
VOLUME = {23},
YEAR = {2026},
NUMBER = {3},
PAGES = {--},
URL = {http://www.techscience.com/CL/v23n3/66872},
ISSN = {1584-8663},
ABSTRACT = {Doping the absorber layer is a critical process for enhancing the performance of polycrystalline CdSeTe solar cells. Replacing traditional Cu doping with Group V dopants offers a pathway to fabricate devices with improved efficiency and stability. However, the dopant activation rate in polycrystalline structures remains low, typically only a few percent. While rapid thermal annealing (RTA) has been successfully employed to achieve high activation rates in single-crystal CdTe devices, its application to polycrystalline CdSeTe solar cells has been scarcely reported. In this study, we systematically applied multi-step annealing to investigate the dopant activation of <i>in-situ</i> As-doped polycrystalline CdSeTe devices. Our findings reveal that polycrystalline devices exhibit significantly lower thermal tolerance than their single-crystal counterparts, sustaining only short-duration annealing at 500°C. Furthermore, although Cl diffusion during RTA can degrade device performance, we observed that trace amounts of CdCl<sub>2</sub> vapor can help stabilize device efficiency.},
DOI = {10.32604/cl.2026.079159}
}