@Article{cl.2026.085424,
AUTHOR = {Changlim Woo, Abdelkader Abderrahmane, Pan Gum Jung, Pil Ju Ko},
TITLE = {Electronic Properties of MoSe<sub>2</sub>/ZrSe<sub>3</sub> Junction Field Effect Transistor},
JOURNAL = {Chalcogenide Letters},
VOLUME = {23},
YEAR = {2026},
NUMBER = {7},
PAGES = {--},
URL = {http://www.techscience.com/CL/v23n7/68329},
ISSN = {1584-8663},
ABSTRACT = {Transition metal dichalcogenides (TMDs) and transition metal trichalcogenides (TMTCs) exhibit tunable electronic properties, and when stacked together in their two dimensional (2D) forms, they can display distinctive electronic properties beyond those of conventional heterostructures. In this study, we fabricated for the first time junction field effect transistor (JFET) by stacking MoSe<sub>2</sub>, a transition metal dichalcogenide (TMD), with ZrSe<sub>3</sub>, a transition metal trichalcogenide (TMTC). We characterized its electrical properties, where the device’s electrical characteristics were analyzed based on the stacking sequence. Two device configurations top-gate and bottom-gate JFETs were fabricated and systematically analyzed. Notably, the top-gate JFET exhibited superior performance, with transconductance (gm) reaching 12.8 μS, carrier mobility up to 366.95 cm<sup>2</sup>/Vs, and a subthreshold swing (SS) of 13.25 V/dec, significantly outperforming the bottom-gate configuration. The successful demonstration of this device not only establishes the feasibility of MoSe<sub>2</sub>/ZrSe<sub>3</sub> heterojunctions for high performance JFET applications but also paves the way for next generation electronic devices based on engineered 2D heterostructures.},
DOI = {10.32604/cl.2026.085424}
}