@Article{cmes.2022.016836,
AUTHOR = {Jung Rye Lee, Aftab Hussain, Asfand Fahad, Ali Raza, Muhammad Imran Qureshi, Abid Mahboob, Choonkil Park},
TITLE = {On ev and ve-Degree Based Topological Indices of Silicon Carbides},
JOURNAL = {Computer Modeling in Engineering \& Sciences},
VOLUME = {130},
YEAR = {2022},
NUMBER = {2},
PAGES = {871--885},
URL = {http://www.techscience.com/CMES/v130n2/45939},
ISSN = {1526-1506},
ABSTRACT = {In quantitative structure-property relationship (QSPR) and quantitative structure-activity relationship (QSAR) studies, computation of topological indices is a vital tool to predict biochemical and physio-chemical properties of chemical structures. Numerous topological indices have been inaugurated to describe different topological features. The ev and ve-degree are recently introduced novelties, having stronger prediction ability. In this article, we derive formulae of the ev-degree and ve-degree based topological indices for chemical structure of <i>Si</i><sub>2</sub><i>C</i><sub>3</sub> − <i>I</i>[<i>a</i>,<i>b</i>].},
DOI = {10.32604/cmes.2022.016836}
}