TY  - EJOU
AU  - Lee, Jung Rye 
AU  - Hussain, Aftab 
AU  - Fahad, Asfand 
AU  - Raza, Ali 
AU  - Qureshi, Muhammad Imran 
AU  - Mahboob, Abid 
AU  - Park, Choonkil 

TI  - On ev and ve-Degree Based Topological Indices of Silicon Carbides
T2  - Computer Modeling in Engineering \& Sciences

PY  - 2022
VL  - 130
IS  - 2
SN  - 1526-1506

AB  - In quantitative structure-property relationship (QSPR) and quantitative structure-activity relationship (QSAR) studies, computation of topological indices is a vital tool to predict biochemical and physio-chemical properties of chemical structures. Numerous topological indices have been inaugurated to describe different topological features. The ev and ve-degree are recently introduced novelties, having stronger prediction ability. In this article, we derive formulae of the ev-degree and ve-degree based topological indices for chemical structure of <i>Si</i><sub>2</sub><i>C</i><sub>3</sub> − <i>I</i>[<i>a</i>,<i>b</i>].
KW  - Topological indices; silicon carbide; ev-degree; ve-degree

DO  - 10.32604/cmes.2022.016836