@Article{cmes.2000.001.065,
AUTHOR = {K.  Garikipati, V.S.  Rao, M.Y.  Hao, E.  Ibok, I. de  Wolf, R. W.  Dutton},
TITLE = {Modelling and Validation of Contribions to Stress in the Shallow Trench Isolation Process Sequence},
JOURNAL = {Computer Modeling in Engineering \& Sciences},
VOLUME = {1},
YEAR = {2000},
NUMBER = {1},
PAGES = {65--84},
URL = {http://www.techscience.com/CMES/v1n1/24666},
ISSN = {1526-1506},
ABSTRACT = {This work is based upon a careful rendering of mechanics and mathematics to describe the phenomena that influence the stress engendered by the Shallow Trench Isolation process. The diffusion-reaction problem is posed in terms of fundamental mass balance laws. Finite strain kinematics is invoked to model the large expansion of SiO<sub>2</sub>, dielectrics are modelled as viscoelastic solids and annealing-induced density relaxation of SiO<sub>2</sub> is incorporated as a history-dependent process. A levelset framework is used to describe the moving Si/SiO<sub>2</sub> interface. Sophisticated finite element methods are employed to solve the mathematical equations posed for each phenomenon. These include the incorporation of discontinuity-resolving shape functions to describe jumps in concentration of O<sub>2</sub>, methods to prevent oscillations of numerical solutions and techniques that allow highly inhomogeneous deformation of a single element. The use of experimental data to rigorously obtain material properties is emphasized. Mechanical properties of viscoelastic solids are extracted directly from stress-strain data, following which, parameters for the diffusion-reaction problem are obtained. Qualitative and quantitative validation of the models is presented; the latter by comparison with micro-Raman spectroscopy measurements.},
DOI = {10.3970/cmes.2000.001.065}
}