TY - EJOU
AU - Kamlesh, Peeyush Kumar
AU - Sharma, Himanshi
AU - Verma, Shrikant
AU - Verma, Ajay Singh
AU - Saxena, Reena
AU - Sharma, Dinesh C.
TI - Halide-Driven Bandgap Engineering and SLME-Based Photovoltaic Performance of Ba3PX3 Compounds: A First-Principles Study
T2 - Computers, Materials \& Continua
PY -
VL -
IS -
SN - 1546-2226
AB - In the present work, Ba3PX3 (X = F, Cl, Br, I) all-inorganic and lead-free halide compositions have been studied as possible replacements for hybrid perovskites using first-principles calculations. All the considered materials were found to exhibit direct band gaps at the Γ-point, decreasing from 2.37 eV (Ba3PF3) to 1.48 eV (Ba3PI3). The optical calculations reveal strong absorption in the visible and near-UV regions, with the static dielectric constants ranging from 2.75 to 4.35 in the halide series. All the compounds are mechanically stable and have tuneable ductility and stiffness properties. Lattice stability is confirmed by thermodynamic analysis in broad temperature ranges (0–900 K) and pressure ranges (0–10 GPa). The spectroscopic limit maximum efficiency (SLME), which is a theoretical screening parameter that represents an upper limit, has a value of 39.17% at 300 K for an absorber thickness of 1 μm, comparable to practical thin-film photovoltaic architectures. The findings identify strong trends in the stability of structures, optoelectronic properties, and photovoltaic characteristics within the Ba3PX3 family and rank Ba3PBr3 and Ba3PI3 among the most promising lead-free photovoltaic absorbers.
KW - Bandgap engineering; optical and dielectric response; elastic and thermodynamic stability; spectroscopic limited maximum efficiency; high-efficiency solar absorbers
DO - 10.32604/cmc.2026.081382