TY  - EJOU
AU  - Zhu, L.L.  
AU  - Zheng, X.J.  

TI  - Stress Field Effects on Phonon Properties in Spatially Confined Semiconductor Nanostructures
T2  - Computers, Materials \& Continua

PY  - 2010
VL  - 18
IS  - 3
SN  - 1546-2226

AB  - The phonon properties of spatially confined nanofilms under the preexisting stress fields are investigated theoretically by accounting for the confinement effects and acoustoelastic effects. Due to the spatial confinement in low-dimensional structures, the phonon dispersion relations, phonon group velocities as well as the phonon density of states are of significant difference with the ones in bulk structures. Here, the continuum elasticity theory is made use of to determine the phonon dispersion relations of shear modes (SH), dilatational modes (SA) and the flexural modes (AS), thus to analyze the contribution of stress fields on the phonon performance of confined nanofilms. Our numerical calculations indicate that the phonon properties can be modified by the preexisting stress fields significantly. The influence of the stress field on the phonon energy, phonon group velocity and the phonon density of states are sensitive to the strength and the direction of stress fields. The results in this paper can offer an alternative and applicable approach for phonon engineering to control the phonon properties in semiconductor nanostructures.
KW  - spatially confined nanofilms
KW  -  phonon engineering
KW  -  continuum elasticity theory
KW  -  acoustoelastic effects
KW  -  phonon dispersion relation
KW  -  phonon group velocity
KW  -  phonon density of states

DO  - 10.3970/cmc.2010.018.301