@Article{cmc.2020.010220,
AUTHOR = {Xiaorong Zhao, Weili Cheng, Hongjin Zhu, Chunpeng Ge, Gengyuan Zhou, Zhongjun Fu},
TITLE = {A High Gain, Noise Cancelling 2515-4900 MHz CMOS LNA for China Mobile 5G Communication Application},
JOURNAL = {Computers, Materials \& Continua},
VOLUME = {64},
YEAR = {2020},
NUMBER = {2},
PAGES = {1139--1151},
URL = {http://www.techscience.com/cmc/v64n2/39351},
ISSN = {1546-2226},
ABSTRACT = {With the development of the times, people’s requirements for communication
technology are becoming higher and higher. 4G communication technology has been
unable to meet development needs, and 5G communication technology has emerged as
the times require. This article proposes the design of a low-noise amplifier (LNA) that
will be used in the 5G band of China Mobile Communications. A low noise amplifier for
mobile 5G communication is designed based on Taiwan Semiconductor Manufacturing
Company (TSMC) 0.13 μm Radio Frequency (RF) Complementary Metal Oxide
Semiconductor (CMOS) process. The LNA employs self-cascode devices in currentreuse configuration to enable lower supply voltage operation without compromising the
gain. This design uses an active feedback amplifier to achieve input impedance matching,
avoiding the introduction of resistive negative feedback to reduce gain. A common
source (CS) amplifier is used as the input of the low noise amplifier. In order to achieve
the low power consumption of LNA, current reuse technology is used to reduce power
consumption. Noise cancellation techniques are used to eliminate noise. The simulation
results in a maximum power gain of 22.783, the reverse isolation (S12) less than -48.092
dB, noise figure (NF) less than 1.878 dB, minimum noise figure (NFmin)=1.203 dB,
input return loss (S11) and output return loss (S22) are both less than -14.933 dB in the
frequency range of 2515-4900 MHz. The proposed Ultra-wideband (UWB) LNA
consumed 1.424 mW without buffer from a 1.2 V power supply.},
DOI = {10.32604/cmc.2020.010220}
}