TY  - EJOU
AU  - Gerstle, Walter  
AU  - Silling, Stewart  
AU  - Read, David  
AU  - Tewary, Vinod  
AU  - Lehoucq, Richard  

TI  - Peridynamic Simulation of Electromigration
T2  - Computers, Materials \& Continua

PY  - 2008
VL  - 8
IS  - 2
SN  - 1546-2226

AB  - A theoretical framework, based upon the peridynamic model, is presented for analytical and computational simulation of electromigration. The framework allows four coupled physical processes to be modeled simultaneously: mechanical deformation, heat transfer, electrical potential distribution, and vacancy diffusion. The dynamics of void and crack formation, and hillock and whisker growth can potentially be modeled. The framework can potentially be applied at several modeling scales: atomistic, crystallite, multiple crystallite, and macro. The conceptual simplicity of the model promises to permit many phenomena observed in microchips, including electromigration, thermo-mechanical crack formation, and fatigue crack formation, to be analyzed in a systematic and unified manner. Interfacial behavior between dissimilar crystallites and materials can also be handled in a natural way. A computational implementation of the theoretical framework is proposed, and a one-dimensional example is presented.
KW  - computational simulation
KW  -  cracks
KW  -  diffusion
KW  -  electromigration
KW  -  hillocks
KW  -  metallic thin films
KW  -  microelectromechanical systems
KW  -  multi-physics
KW  -  multi-scale
KW  -  peridynamic
KW  -  voids

DO  - 10.3970/cmc.2008.008.075