@Article{csse.2023.034681,
AUTHOR = {A. Arulmary, V. Rajamani, T. Kavitha},
TITLE = {Semiconducting SWCNT Photo Detector for High Speed Switching Through Single Halo Doping},
JOURNAL = {Computer Systems Science and Engineering},
VOLUME = {46},
YEAR = {2023},
NUMBER = {2},
PAGES = {1617--1630},
URL = {http://www.techscience.com/csse/v46n2/51630},
ISSN = {},
ABSTRACT = {The method opted for accuracy, and no existing studies are based on this method. A design and characteristic survey of a new small band gap semiconducting Single Wall Carbon Nano Tube (SWCNT) Field Effect Transistor as a photodetector is carried out. In the proposed device, better performance is achieved by increasing the diameter and introducing a new single halo (SH) doping in the channel length of the CNTFET device. This paper is a study and analysis of the performance of a Carbon Nano Tube Field Effect Transistor (CNTFET) as a photodetector using the self-consistent Poisson and Green function method. The 2D self-consistent Poisson and Green’s function method for various optical intensities and wavelength simulate this proposed photodetector. The performance study is based on the simulation of drain current, transconductance, sub-threshold swing, cut-off frequency, gain, directivity, and quantum efficiency under dark and illuminated conditions. These quantum simulation results show that cut-off frequency increases while there is an increase in diameter. The proposed SH-CNTFET provides better performance in terms of higher gain and directivity than conventional CNTFET (C-CNTFET). This device will be helpful in optoelectronic integrated circuits (OEIC) receivers due to its superior performance.},
DOI = {10.32604/csse.2023.034681}
}