@Article{fdmp.2006.002.175,
AUTHOR = {T. J. Jaber,  M. Z. Saghir},
TITLE = {The Effect of Rotating Magnetic Fields on the Growth of SiGe Using the Traveling Solvent Method},
JOURNAL = {Fluid Dynamics \& Materials Processing},
VOLUME = {2},
YEAR = {2006},
NUMBER = {3},
PAGES = {175--190},
URL = {http://www.techscience.com/fdmp/v2n3/38067},
ISSN = {1555-2578},
ABSTRACT = {The study deals with three-dimensional numerical simulations of fluid flow and heat transfer under the effect of a rotating magnetic field (RMF) during the growth of Ge<sub>0.98</sub>Si<sub>0.02</sub> by the traveling solvent method (TSM). By using a RMF, an attempt is made to suppress buoyancy convection in the Ge<sub>0.98</sub>Si<sub>0.02</sub> solution zone in order to get high quality and homogeneity with a flat growth interface. The full steady-state Navier-Stokes equations, as well as the energy, mass transport and continuity equations, are solved numerically using the finite element method. Different magnetic field intensities (B=2, 4, 10, 15 and 22 mT) for different rotational speeds (2, 7 and 10 rpm) under uniform and non-uniform heater profile conditions are considered. The results show that the RMF has a marked effect on the silicon concentration near the growth interface, changing the shape of the concentration profile from convex to nearly flat when the magnetic field intensity increases.},
DOI = {10.3970/fdmp.2006.002.175}
}