TY  - EJOU
AU  - Jaber, T. J. 
AU  - Saghir, M. Z. 

TI  - The Effect of Rotating Magnetic Fields on the Growth of SiGe Using the Traveling Solvent Method
T2  - Fluid Dynamics \& Materials Processing

PY  - 2006
VL  - 2
IS  - 3
SN  - 1555-2578

AB  - The study deals with three-dimensional numerical simulations of fluid flow and heat transfer under the effect of a rotating magnetic field (RMF) during the growth of Ge<sub>0.98</sub>Si<sub>0.02</sub> by the traveling solvent method (TSM). By using a RMF, an attempt is made to suppress buoyancy convection in the Ge<sub>0.98</sub>Si<sub>0.02</sub> solution zone in order to get high quality and homogeneity with a flat growth interface. The full steady-state Navier-Stokes equations, as well as the energy, mass transport and continuity equations, are solved numerically using the finite element method. Different magnetic field intensities (B=2, 4, 10, 15 and 22 mT) for different rotational speeds (2, 7 and 10 rpm) under uniform and non-uniform heater profile conditions are considered. The results show that the RMF has a marked effect on the silicon concentration near the growth interface, changing the shape of the concentration profile from convex to nearly flat when the magnetic field intensity increases.
KW  - Silicon (Si)
KW  -  Germanium (Ge)
KW  -  Traveling solvent method (TSM)
KW  -  Rotating magnetic field (RMF)
KW  -  Growth interface
KW  -  Dissolution interface

DO  - 10.3970/fdmp.2006.002.175