@Article{fdmp.2012.008.353,
AUTHOR = {Morteza  Eslamian, M. Ziad  Saghir},
TITLE = {Thermodiffusion Applications in MEMS, NEMS and Solar Cell Fabrication by Thermal Metal Doping of Semiconductors},
JOURNAL = {Fluid Dynamics \& Materials Processing},
VOLUME = {8},
YEAR = {2012},
NUMBER = {4},
PAGES = {353--380},
URL = {http://www.techscience.com/fdmp/v8n4/24308},
ISSN = {1555-2578},
ABSTRACT = {In this paper recent advances pertinent to the applications of thermodiffusion or thermomigration in the fabrication of micro and nano metal-doped semiconductor-based patterns and devices are reviewed and discussed. In thermomigration, a spot, line, or layer of a p-type dopant, such as aluminum, which is deposited on a semiconductor surface, penetrates into the semiconductor body due to the presence of a temperature gradient applied across the wafer body. The trails of p-doped regions within an n-type semiconductor, in the form of columns or walls, may be used for several applications, such as the isolation of a part of a semiconductor device, the formation of conductive channels within a silicon block, the fabrication of three-dimensional arrays for biological applications, manufacturing of solar cells, manipulation of material properties, and so on.},
DOI = {10.3970/fdmp.2012.008.353}
}