TY  - EJOU
AU  - Shemirani, M. M.  
AU  - Saghir, M. Z.  

TI  - An Alternative Approach to Minimize the Convection in Growing a Large Diameter Single Bulk Crystal of Si<sub>0.25</sub>Ge<sub>0.75</sub> Alloy in a Vertical Bridgman Furnace
T2  - Fluid Dynamics \& Materials Processing

PY  - 2013
VL  - 9
IS  - 1
SN  - 1555-2578

AB  - Producing homogeneous single bulk crystals requires a good understanding of the thermo-solutal behavior in the solvent region. This study explores simulation of the growth of large diameter single bulk crystals of silicon and germanium alloy from its melt utilizing Bridgman method. Both thermal and solutal diffusion of silicon and germanium in the molten SiGe alloy are of interest. It was observed that the diffusion dominates the transport phenomenon in the solvent region especially in the first 25 mm of the model due to having a Pe<sub><i>T</i></sub> <<1. It was also found that the control of both radial and axial applied temperature can be considered as an alternative approach to obtain a homogeneous and uniform distribution of silicon in the solvent region, more specifically near the solid liquid interface. This of course was accompanied by applying a reduced pulling rate. The aforementioned parameters are integral part of obtaining a flat or near flat shape interface which is most sought after in industry.
KW  - Crystal Growth
KW  -  Thermal Gradient
KW  -  Silicon-Germanium
KW  -  Bridgman

DO  - 10.3970/fdmp.2013.009.011