
@Article{icces.2023.010538,
AUTHOR = {Liuyu Yang, Peng Jiang, Tiejun Wang},
TITLE = {Segment	Crack	Formation	and	Density	Regulation	in	Air	Plasma	Sprayed	 Coatings},
JOURNAL = {The International Conference on Computational \& Experimental Engineering and Sciences},
VOLUME = {25},
YEAR = {2023},
NUMBER = {3},
PAGES = {1--1},
URL = {http://www.techscience.com/icces/v25n3/53858},
ISSN = {1933-2815},
ABSTRACT = {Air	Plasma	Sprayed	(APS)	Thermal	Barrier	Coatings	(TBCs)	have	been	widely	used	in	land-based	gas	engines	
for	 enhancing	 the	 high	 temperature	 performance	 due	 to	 their	 outstanding	 thermal	 insulation	 and	 high	
durability.	Introducing	the	segment	cracks	into	APS-TBCs	to	enhance	its	durability	has	been	quite	attractive	
approaches	nowadays.	Qualitative	conclusions	have	been	drawn	 to	explore	 the	mechanisms	 on	segment	
crack	formation	in	the	past	decades.	This	article	acts	as	a	quantitative	study	of	segment	crack	formation	and	
crack	 density	 regulation	 mechanism	 in	 APS	 Yttria-Stabilized	 Zirconia	 (YSZ)	 TBCs	 with	 experimental	
observations	and	analytical	calculations.	An	in-situ	stress	measurement	method	is	developed	through	a	selfdeveloped	 in-situ	 beam	 curvature	 measurement	 equipment	 to	 monitor	 the	 quenching	 stress	 evolution	
during	 deposition.	 Therefore,	 the	 influence	 mechanisms	 among	 deposition	 parameters,	 peak	 quenching	
stress	and	segment	crack	formation	are	summarized.	A	shear-lag model	is	used	to	describe	the	stress	fields	
in	APS	TBC	in	 deposition	 stage,	 further	 cracking	analysis	and	 segment	 crack	 density	analysis	 have	 been	
carried	out	to	verify	the	experimental	results.	The	linear	relationship	among	temperature	variation,	peak	
quenching	stress,	coating	microstructures and	segment	crack	densities	is	concluded	and	 the	influence	of	
preheating	temperature	and	passage	thickness	on	peak	stress	is	analyzed.	The	analytical	and	experimental	
results	 can	 be	 further	 applied	 to	 predict	 and	 optimise	 the	 coating	 characteristics	 with	 given	 processing	
parameters.},
DOI = {10.32604/icces.2023.010538}
}



