@Article{icces.2023.09679,
AUTHOR = {Jun Yin, Jidong Li},
TITLE = {Kinetic Photovoltage from Moving Boundaries of Electrical Double Layer},
JOURNAL = {The International Conference on Computational \& Experimental Engineering and Sciences},
VOLUME = {27},
YEAR = {2023},
NUMBER = {2},
PAGES = {1--2},
URL = {http://www.techscience.com/icces/v27n2/54165},
ISSN = {1933-2815},
ABSTRACT = {External photo-stimuli on heterojunctions commonly induce an electric potential gradient across the 
interface therein, such as photovoltaic effect, giving rise to various present-day technical devices. In contrast, 
in-plane potential gradient along the interface has been rarely observed. Here we show that moving a light 
beam at the semiconductor-water interface, i.e. creating a moving boundary of electrical double layers 
between the illuminated and dark regions, induce a potential gradient along the semiconductor. It is 
attributed to the following movement of a charge packet in the vicinity of the silicon surface, whose 
formation is driven by a built-in electrical field associated with interface capacitance [1]. By applying a bias 
at the semiconductor-water interface, a transistor-inspired gate modulation of kinetic photovoltage is 
further developed. The kinetic photovoltage signals can be facilely switched on/off due to the electricalfield-modulated surface band bending. In contrast to the function of solid-state transistors relying on 
external sources, passive gate modulation of the kinetic photovoltage is achieved simply by introducing a 
counter electrode with materials of desired electrochemical potential. This architecture opens up a new way 
for silicon-based photoelectronics and self-powered optoelectronic logic devices.},
DOI = {10.32604/icces.2023.09679}
}