@Article{jrm.2022.021609,
AUTHOR = {Shams B. Ali, Sarmad Fawzi Hamza Alhasan, Evan T. Salim, Forat H. Alsultany, Omar S. Dahham},
TITLE = {Pulse Laser Deposition of HfO<sub>2</sub> Nanoporous-Like Structure, Physical Properties for Device Fabrication},
JOURNAL = {Journal of Renewable Materials},
VOLUME = {10},
YEAR = {2022},
NUMBER = {11},
PAGES = {2819--2834},
URL = {http://www.techscience.com/jrm/v10n11/48735},
ISSN = {2164-6341},
ABSTRACT = {The pulsed laser deposition (PLD) technology was used to effectively create conductive nano and micro hafnium oxide with great purity and transparency for (HfO<sub>2</sub>) nanofilms. In many optoelectronics devices and their applications, the presence of a high dielectric substance like a nano HfO<sub>2</sub>, between the metal contacts and the substrates was critical. We used the Pulsed Laser Deposition method to fabricate an Al/HfO<sub>2</sub>/p-Si Schottky barrier diode where the nanostructured HfO<sub>2</sub> films as an intermediate layer and varied substrate temperatures. The optical result reveals a high degree of transparency (93%). The optical bandgap of deposited HfO<sub>2</sub> films was observed to vary between 4.9 and 5.3 eV, with a value of roughly 5.3 eV at the optimal preparation condition. The morphology of the surface shows a high homogeneous nano structure with the average values of the roughness about (0.3 nm). With regard to substrate temperature, the produced factor ideality for fabricated diode was determined to be lowering and the associated values of the barrier height rose based on I-V characterization. With regard to substrate temperature, the produced factor ideality for fabricated diode was determined to be lowering and the associated values of the barrier height rose based on I-V characterization. The diode manufactured at 600°C, in particular, had a higher ideality factor value (n = 3.2).},
DOI = {10.32604/jrm.2022.021609}
}