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Effect of Different Etching Time on Fabrication of an Optoelectronic Device Based on GaN/Psi

Haneen D. Jabbar1,*, Makram A. Fakhri1,*, Mohammed Jalal Abdul Razzaq1, Omar S. Dahham2,3, Evan T. Salim4, Forat H. Alsultany5, U. Hashim6

1 Laser and Optoelectronic Engineering Department, University of Technology-Iraq, Baghdad, Iraq
2 Department of Civil Engineering, College of Engineering, Cihan University-Erbil, Kurdistan Region, Iraq
3 Department of Petroleum and Gas Refinery Engineering, Al-Farabi University Collage, Baghdad, Iraq
4 Applied Science Department, University of Technology-Iraq, Baghdad, Iraq
5 Department of Medical Physics, Al-Mustaqbal University College, Babylon, Iraq
6 Institute of Nano Electronic Engineering, University Malaysia Perlis, Kangar, Perlis, Malaysia

* Corresponding Authors: Haneen D. Jabbar. Email: email; Makram A. Fakhri. Email: email,email

TSP_JRM_23698.pdf

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