S. N. Yasinova^a,*, S. I. Mekhtiyeva^b, M. H. Huseynaliyev^a, R. I. Alekberov^b

Chalcogenide Letters, Vol.21, No.5, pp. 377-383, 2024, DOI:10.15251/CL.2024.215.377

Abstract Structural properties of PbSe, PbS and PbS_0.5Se_0.5 thin films and mechanisms of combinational scattering of light from phonons were studied by X-ray diffraction and Raman spectroscopy methods. The results of X-ray diffraction show that the crystallite sizes found in the thin layers of the studied substances are in the order of nanometers and vary in the interval d~10.7 ÷ 30.8 nm. It was determined that the scattering bands of the PbSe_0.5S_0.5 sample with large nanoparticle sizes shift to the region of large wave numbers compared to the scattering bands observed in the region of low wave More >

K. Turmanova^a, O. Prikhodko^a, Zh. Tolepov^a, S. Maksimova^a, N. Manabaev^b, N. Almas^c,*

Chalcogenide Letters, Vol.21, No.7, pp. 575-581, 2024, DOI:10.15251/CL.2024.217.575

Abstract In this study, we used Raman spectroscopy to compare the local structure of Ge2Sb2Te5 (GST) thin films with thicknesses of 90 nm and 271 nm that were crystallized through thermal annealing and laser radiation (laser annealing) during the recording of Raman spectra in situ. We found that for all crystallized films, the position of the main peaks in the Raman spectra was almost the same, and their structure corresponded to a hexagonal close packed state. It is noteworthy that the full width at half maximum (FWHM) of the main peaks varies considerably depending on the More >

S. Kumar^a, A. Alam^b, K. P. Tiwary^c,*

Chalcogenide Letters, Vol.21, No.7, pp. 567-574, 2024, DOI:10.15251/CL.2024.217.567

Abstract The development of CdZnS thin films using the chemical bath deposition process in nonaqueous media is a technological challenge. In this work, 75 millilitres of ethylene glycol and ethanol (1:2 ratios) were used to develop a CdZnS thin film on ITO and FTO glass substrates using cadmium acetate, zinc sulphate, and thiourea. The ideal bath temperature was kept at 130℃ and the anneal temperature of the film that had been deposited in the air was maintained at 350℃. The films have been examined using FTIR, WCA, FESEM, and XRD. XRD studies reveal that CdZnS films… More >

Y. Qachaou^a,*, O. Daoudi^b, I. Jellal^a, A. Fahmi^a, M. Lharch^a, A. Qachaou^a, A. Raidou^a, M. Fahoume^a

Chalcogenide Letters, Vol.21, No.7, pp. 557-565, 2024, DOI:10.15251/CL.2024.217.557

Abstract The (SnS) thin films were prepared by Successive Ionic Layer Adsorption and Reaction (SILAR), a versatile and simple method. The cationic and anionic solutions SnCl₂.2H₂O and Na₂S.9H₂O respectively were used as precursor materials, which will be deposited on glass substrates to study the effect of rinsing temperature on the properties of our thin films. The structural, morphological, and optical properties were investigated by using X-ray diffraction, Energy Dispersive X-ray analysis (EDX), Scanning Electron Microscopy (SEM) and spectrophotometer. X-ray Diffraction (XRD) patterns indicated that the deposited SnS thin films have an orthorhombic crystal structure. Uniform deposition of More >

A. Skender^a, A. Aissat^a,b,c,*, J. P. Vilcot^c

Chalcogenide Letters, Vol.21, No.8, pp. 651-663, 2024, DOI:10.15251/CL.2024.218.651

Abstract The use of semiconductors based on abundant and less expensive materials in photovoltaic industry has grown since electricity consumption has increased, alloys such as Cu₂ZnSn(S_1-xSe_x)₄ have recently attracted attention, due to its structural, optical and electronic properties which make it a very promising candidate as an absorber layer in photovoltaic applications. The lattice mismatch of Cu₂ZnSn(S_1-xSe_x)₄ with Cu2NiGeS4 as substrate for solar cell architecture reveals that low Se content (0.1≤x≤0.4) is favorable, and thus, by reducing Se content from 40 to 10% induces a decrease in optical parameters such as refractive index from 5.475 to 3.834 More >

D. N. Alhilfi^a,*, A. S. Al-Kabbib^b

Chalcogenide Letters, Vol.21, No.8, pp. 641-649, 2024, DOI:10.15251/CL.2024.218.641

Abstract The electrochemical deposition method created a CdSe thin film on FTO glass substrates. The film was examined using field scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction, Raman spectroscopy, and optical and electrochemical measurements. The results show that the CdSe nanoparticles were evenly distributed on the substrate, with a Cd/Se ratio of 63.30% Se and 36.70% Cd. The XRD revealed a polycrystalline, hexagonal structure. The film is n-type semiconductor concentration with a carrier concentration of 1.194×10²⁰ cm^-3 . The CdSe showed 552.5 mF/cm² of specific capacity with energy and a power density of 2.5 mW/cm² and 9000 mW/cm² More >

B. K. H. Al-Maiyaly, S. M. Ali, B. H. Hussein, H. K. Hassun^*

Chalcogenide Letters, Vol.21, No.8, pp. 605-613, 2024, DOI:10.15251/CL.2024.218.605

Abstract Copper doped Zinc oxide and (n-ZnO / p-Si and n-ZnO: Cu / p-Si) thin films thru thickness (400±20) nm were deposited by thermal evaporation technique onto two substrates. The influence of different Cu percentages (1%,3% and 5%) on ZnO thin film besides hetero junction (ZnO / Si) characteristics were investigated, with X-ray diffractions examination supports ZnO films were poly crystal then hexagonal structural per crystallite size increase from (22.34 to 28.09) nm with increasing Cu ratio. The optical properties display exceptional optically absorptive for 5% Cu dopant with reduced for optically gaps since 3.1 toward More >

M. Sudha^a,*, A. B. Madhan^b, M. Revathi^c, N. Thangaraj^d

Chalcogenide Letters, Vol.21, No.9, pp. 757-764, 2024, DOI:10.15251/CL.2024.219.757

Abstract An inexpensive spray pyrolysis process has been used to create thin layer of tin disulphide. The concentration, flow rate, and nozzle to substrate distance were tuned as deposition parameters to produce high-quality thin films. Temperature is varied in the range 200˚C to 350˚C. Through physical research, properties such as the structural, electrical and optical were examined. The films generated are SnS2 with a hexagonal structure, as revealed by X-ray diffraction. EDAX analysis confirms SnS2 thin films. Scanning electron microscopy indicated uniform stacking and material adherence to the glass substrate. A 2.22 eV straight band gap More >

Y. B. Kishore Kumar^a, S. Guru Prasad^b, A. S. Swapna Smitha^c, U. Chalapathi^d,*, G. Suresh Babu^c, Y. Jayasree^e, P. Uday Bhaskar^f, Si-Hyun Park^d

Chalcogenide Letters, Vol.21, No.9, pp. 719-727, 2024

Abstract This study explores the ternary compound semiconductor as a potential absorber layer for third-generation solar cells. CuSbS₂, a promising candidate for thin film absorber layers, is fabricated using a simple spray pyrolysis method. The research specifically investigates the influence of two different carrier gases during the fabrication process. X-ray diffraction as well as Raman studies confirm that the films exhibit a chalcostibite structure. Notably, films fabricated with nitrogen as the carrier gas demonstrate enhanced crystallinity, accompanied by reduced microstrain and dislocation density. Furthermore, these films exhibit a significantly improved absorption coefficient, reaching 10⁵ cm^-1 . Optical studies More >

H. K. Mahmood^*, B. H. Hussein

Chalcogenide Letters, Vol.21, No.9, pp. 687-694, 2024, DOI:10.15251/CL.2024.219.687

Abstract ZnIn₂(Se_1-xTe_x)₄ (ZIST) chalcopyrite semiconductor thin films at various contents (x = 0.0, 0.2, and 0.4) are deposited on glass and p type silicon (111) substrate to produce heterojunction solar cell by using the thermal evaporation technique at RT where the thickness of 500 nm with a vacuum of 1×10^-5 mbar and a deposited rates of 5.1 nm/s. This study focuses on how differing x content effect on the factors affecting the solar cell characteristics of ZIST thin film and n-ZIST/p-Si heterojunction. X-ray diffraction XRD investigation shows that this structure of ZIST film is polycrystalline and tetragonal,… More >