I. Nkrumah^*, F. K. Ampong, A. Britwum, M. Paal, B. Kwakye-Awuah, R. K. Nkum, F. Boakye

Chalcogenide Letters, Vol.20, No.6, pp. 399-407, 2023, DOI:10.15251/CL.2023.206.399

Abstract A study has been carried out to investigate the effect of the concentration of Sn in the metallic precursor on the structure, morphology, optical and electrical properties of PbSnS thin films. The films were directly electrodeposited on ITO-coated glass substrates using a 3-electrode electrochemical cell having graphite as the counter electrode and Ag/AgCl as the reference electrode. Several depositions were carried out, with each deposited film having a different concentration of Sn in the metallic precursor whilst all other parameters were kept constant for all the films. Post deposition annealing was carried out in air… More >

A. M. Jawore^a, T. Xaba^a,*, M. J. Moloto^b

Chalcogenide Letters, Vol.20, No.7, pp. 497-505, 2023, DOI:10.15251/CL.2023.207.497

Abstract Nickel sulfides nanocrystals may be regarded as promising of materials in different research areas such as catalysts, solar cells, and electrode-materials. (Z)-2-(pyrrolidin-2-ylidene) thiourea ligand and (Z)-2-(pyrrolidin-2-ylidene) thiourea based nickel (II) complex have been prepared and utilized as single source molecular precursor for the synthesis of nickel sulfide nanoparticles and thin films. The effect of temperature was studies during the synthetic processes. The synthesized nanomaterials were characterized with various instruments. UV-Vis spectroscopy results of the nanoparticles were red shifting when the reaction temperature was increased whereas the blue shift was observed when the temperature was elevated More >

S. Sultanbekov^a, O. Prikhodko^b, N. Almas^c,*

Chalcogenide Letters, Vol.20, No.7, pp. 487-496, 2023, DOI:10.15251/CL.2023.207.487

Abstract The optical properties of Ge₂Sb₂Te₅ thin films were studied as a function of thickness. An increase in optical band gap with decreasing film thickness has been observed. The current– voltage characteristics measured in Ge₂Sb₂Te₅ thin films in the current mode are studied. A decrease in switching time and threshold voltage with decreasing film thickness is established. More >

R. H. Athab, B. H. Hussein^*

Chalcogenide Letters, Vol.20, No.7, pp. 477-485, 2023, DOI:10.15251/CL.2023.207.477

Abstract Zinc Telluride ZnTe alloys and thin film have been fabricated and deposited on glass substrates by thermal evaporation method which may be a suitable window layer of zinc telluride with different annealing temperatures (373 and473) K for 60 minutes in vacuum. Deposited thin films with thickness 100 nm was characteristic by using X-ray diffraction XRD to know structures, Atomic Force Microscopy (AFM) to evaluate surface topology, morphology. It was found out that the vacuum annealing improves on thin ZnTe films structure and surface morphology. Structural analysis reveals that ZnTe films have zinc blende structure of More >

J. S. Mohammed^a,*, F. K. Nsaif^b, Y. M. Jawad^a, K. A. Jasim^b, A. H. Al Dulaimi^a

Chalcogenide Letters, Vol.20, No.7, pp. 449-458, 2023, DOI:10.15251/CL.2023.207.449

Abstract In this work, As₆₀Cu_40-xSe_x thin films were synthesized, and the pulsed laser deposition method was used to study the effected partial replacement of copper with selenium. The electrical characteristics and optical characteristics, as indicated by the absorbance and transmittance as a function of wavelength were calculated. Additionally, the energy gap was computed. The electrical conductivity of the DC in the various conduction zones was calculated by measuring the current and voltage as a function of temperature. Additionally, the mathematical equations are used to compute the energy constants, electron hopping distance, tail width, pre-exponential factor, and density More >

Z. Hadef^a,*, K. Kamli^a, O. Kamli^b, S. Labiod^a

Chalcogenide Letters, Vol.20, No.8, pp. 587-597, 2023, DOI:10.15251/CL.2023.208.587

Abstract Ultrasonic Spray Pyrolysis (USP) was used to deposited Co doped SnS₂ thin films on a glass substrate at different substrate temperatures (Ts = 350 °C, 375 °C, 400 °C, and 425 °C). DRX patterns shows that the synthesized films revealed a pure SnS2 phase with hexagonal structure. The mean crystalline grain sizes were showed an increasing– decreasing trend between 15.67 and 29.84 nm with an increment in the substrate temperature. The SEM images were significantly affected by the substrate temperature. Also, the optical band gap increases from 2.62 to 3.00 eV with the substrate temperatures increasing. More >

R. Singh^a,*, S. Kimothi^b, M. V. Singh^c, U. Rani^d, A. S. Verma^d,e,*

Chalcogenide Letters, Vol.20, No.8, pp. 573-578, 2023, DOI:10.15251/CL.2023.208.573

Abstract In this research paper, we have prepared thin film of MoS₂ by thermal evaporation technique and characterized it. This thin film depositions lead to amorphous thin film. To make it crystalline, thermal annealing of the film have deposited on the substrates at 800 ℃ for two hour under vacuum environment. X-ray diffraction data of thin film shows the poly-crystalline nature. The Atomic Force Microscopy (AFM) image of the thin film shows the crystallinity with regularly arranged grains. Furthermore, an unconventional MoS₂ based FET device has been fabricated by depositing thin film of MoS₂ on p-type silicon. Thereafter, More >

D. Dekhil^a,*, H. Guessas^a, A. Nouri^a, S. Ullah^b

Chalcogenide Letters, Vol.20, No.8, pp. 549-558, 2023, DOI:10.15251/CL.2023.208.549

Abstract SnS thin films were synthesized using the spray pyrolysis method and then annealed at 350, 400, and 450°C. According to the crystallographic analysis, the obtained SnS thin films crystallized in the polycrystalline orthorhombic system. The grains measured 47, 66, and 37 nm for the samples annealed at 350, 400, and 450°C, respectively. SEM and AFM images indicate that the samples’ surfaces were completely covered. Thus, the grains of SnS nanostructures have a granular-like shape and vary in size depending on the annealing temperatures. The transmittance measurement shows that annealing the sample at 400 °C extends… More >

A. Nouri^*, D. Dekhil, H. Guessas

Chalcogenide Letters, Vol.20, No.10, pp. 753-758, 2023, DOI:10.15251/CL.2023.2010.753

Abstract SnS nanostructures were prepared using the electrodeposition technique in aqueous solutions containing 0.1M of SnSO4 and Na2SO4. Three concentrations (0.05M, 0.10M, and 0.15M) of Na2SO4 were tested. The electrodeposition of SnS nanostructures on ITO substrates was investigated by cyclic voltammetry, chronoamperometry, SEM microscopy, and X-ray diffraction techniques. The concentration-dependent nucleation and growth mechanisms of electrodeposited SnS were analyzed using current transients. For the concentrations (0.05M and 0.10 M), the SnS films follow 3D growth in instantaneous nucleation mode. For a concentration of 0.15M, the SnS films start with progressive nucleation before switching to the instantaneous More >

O. V. Iaseniuc^*, M. S. Iovu

Chalcogenide Letters, Vol.20, No.10, pp. 725-731, 2023, DOI:10.15251/CL.2023.2010.725

Abstract In the present work some nanostructured quaternary chalcogenides of the As-S-Sb-Te sys tem have been investigated by a photoelectric method. The spectral distribution of steady state photocurrent I_ph=(λ) and the relaxation curves of photocurrent I_ph=(t) were registered at positive and negative polarity of the applied voltage to the top Al illuminated electrode. In the spectral distribution of steady-state photocurrent, for the amorphous thin films As_1.17S_2.7Sb_0.83Te_0.40, As_1.04S_2.4Sb_0.96Te_0.60, As_0.63S_2.7Sb_1.37Te_0.30, and As_0.56S_2.4Sb_1.44Te_0.60 in the wavelength range λ=0.50÷0.92 mm (2.48÷1.35 eV) some maxima were detected, which are the result of the presence of binary clusters As₂S₃, Sb₂S₃ and Sb₂S₃. The photo voltaic method was used More >