Veturia Chiroiu¹, Ligia Munteanu² and Antonio S. Gliozzi³

CMC-Computers, Materials & Continua, Vol.19, No.1, pp. 1-16, 2010, DOI:10.3970/cmc.2010.019.001

Abstract This paper develops a mechanical model for multifunctional reinforced carbon nanotube (CNT) beams. The model is obtained by introducing the couple stresses into the constitutive equations of linear viscoelastic theory. The material functions are determined using the homogenization method. More >

L.L. Zhu^1,2,3, X.J. Zheng^1,2

CMC-Computers, Materials & Continua, Vol.18, No.3, pp. 301-320, 2010, DOI:10.3970/cmc.2010.018.301

Abstract The phonon properties of spatially confined nanofilms under the preexisting stress fields are investigated theoretically by accounting for the confinement effects and acoustoelastic effects. Due to the spatial confinement in low-dimensional structures, the phonon dispersion relations, phonon group velocities as well as the phonon density of states are of significant difference with the ones in bulk structures. Here, the continuum elasticity theory is made use of to determine the phonon dispersion relations of shear modes (SH), dilatational modes (SA) and the flexural modes (AS), thus to analyze the contribution of stress fields on the phonon More >

Tai-Ming Chang¹, Chien-Chou Weng¹, Mei-Jiau Huang^1,2, Chun-KaiLiu², Chih-Kuang Yu²

CMES-Computer Modeling in Engineering & Sciences, Vol.50, No.1, pp. 47-66, 2009, DOI:10.3970/cmes.2009.050.047

Abstract We employ the non-equilibrium molecular dynamics (NEMD) simulation to calculate the in-plane thermal conductivity of silicon thin films of thickness 2.2nm and 11nm. To eliminate the finite-size effect, samples of various lengths are simulated and an extrapolation technique is applied. To perform the quantum correction which is necessary as the MD simulation temperature is lower than Debye temperature, the confined phonon spectra are obtained in advance via the EMD simulations. The investigation shows the thermal conductivities corrected based on the bulk and thin-film phonon densities of states are very close and they agree excellently with More >

E. Majchrzak¹, B. Mochnacki², A. L. Greer³, J. S. Suchy⁴

CMES-Computer Modeling in Engineering & Sciences, Vol.41, No.2, pp. 131-146, 2009, DOI:10.3970/cmes.2009.041.131

Abstract Multi-layered thin metal film subjected to a short-pulse laser heating is considered. Mathematical description of the process discussed bases on the equation in which there appear the relaxation time and the thermalization time (dual-phase-lag-model). In this study we develop a three level implicit finite difference scheme for numerical modelling of heat transfer in non-homogeneous metal film. At the interfaces an ideal contact between successive layers is assumed. At the stage of computations a solution of only one three-diagonal linear system corresponds to transition from time t to t + Δt. The mathematical model, numerical algorithm and examples More >

Hao-Miao Zhou¹, Fang Li¹, Qiang Ye¹, Ji-Xiang Zhao¹, Zhe-Lei Xia¹, YingTang², Jing Wei³

CMC-Computers, Materials & Continua, Vol.13, No.3, pp. 235-248, 2009, DOI:10.3970/cmc.2009.013.235

Abstract At present, there are many methods about Young's modulus measurement of thin films, but so far there is no recognized simple, non-destructive and cheaper standard measurement method. Considering thin films with various thicknesses were sputter deposited on the magnetostrictive resonator and monitoring the resonator's first-order longitudinal resonant frequency shift both before and after deposition induced by external magnetic field, an Young's modulus assessing method based on classical laminated plate theory is presented in this paper. Using the measured natural frequencies of Au, Cu, Cr, Al and SiC materials with various thicknesses in the literature, the More >

Arun K. Nair¹, Diana Farkas², Ronald D. Kriz¹

CMES-Computer Modeling in Engineering & Sciences, Vol.24, No.2&3, pp. 239-248, 2008, DOI:10.3970/cmes.2008.024.239

Abstract The indentation response of Ni thin films of thicknesses in the nano scale was studied using molecular dynamics simulations with embedded atom method (EAM) interatomic potentials. Simulations were performed in single crystal films in the [111] orientation with thicknesses of 7nm and 33nm. In the elastic regime, the loading curves observed start deviating from the Hertzian predictions for indentation depths greater than 2.5% of the film thickness. The observed loading curves are therefore dependent on the film thickness. The simulation results also show that the contact stress necessary to emit the first dislocation under the More >

Walter Gerstle¹, Stewart Silling², David Read³, Vinod Tewary⁴, Richard Lehoucq⁵

CMC-Computers, Materials & Continua, Vol.8, No.2, pp. 75-92, 2008, DOI:10.3970/cmc.2008.008.075

Abstract A theoretical framework, based upon the peridynamic model, is presented for analytical and computational simulation of electromigration. The framework allows four coupled physical processes to be modeled simultaneously: mechanical deformation, heat transfer, electrical potential distribution, and vacancy diffusion. The dynamics of void and crack formation, and hillock and whisker growth can potentially be modeled. The framework can potentially be applied at several modeling scales: atomistic, crystallite, multiple crystallite, and macro. The conceptual simplicity of the model promises to permit many phenomena observed in microchips, including electromigration, thermo-mechanical crack formation, and fatigue crack formation, to be More >

A. Pereira¹, P.M.J. Trevelyan², U. Thiele³, S. Kalliadasis¹

FDMP-Fluid Dynamics & Materials Processing, Vol.3, No.4, pp. 303-316, 2007, DOI:10.3970/fdmp.2007.003.303

Abstract We investigate the interaction between thin films and chemical reactions by using two prototype systems: a thin liquid film falling down a planar inclined substrate in the presence of an exothermic chemical reaction and a horizontal thin liquid film with a reactive mixture of insoluble surfactants on its surface. In the first case the chemical reaction has a stabilizing influence on the dynamics of the film and dampens the free-surface solitary pulses. In the second case the chemical reaction can destabilize the film and lead to the formation of free-surface solitary pulses. More >

W. Li¹ and T. Siegmund¹

CMES-Computer Modeling in Engineering & Sciences, Vol.5, No.1, pp. 81-90, 2004, DOI:10.3970/cmes.2004.005.081

Abstract Results of a computational study of the mechanics of indentation induced interface delamination are described for a system consisting of a ductile film on an elastic substrate. Special attention is paid to the properties of the interface between film and substrate, and the influence of the interface properties on the indentation response. Specifically, strong interfaces are considered. The interface is characterized by the use of a cohesive zone model. The finite element method is used to solve the boundary value problem, with the interface behavior incorporated via a cohesive model in a traction-separation formulation. The More >

T. Iwasaki¹ and H. Miura¹

CMES-Computer Modeling in Engineering & Sciences, Vol.4, No.5, pp. 551-558, 2003, DOI:10.3970/cmes.2003.004.551

Abstract We have developed a molecular-dynamics technique for investigating migration-induced failures in interconnect films for ULSIs. This technique was used to simulate grain-boundary grooving in Al and Cu films. The simulations showed that the grain-boundary grooves are formed by atomic diffusion at the grain boundary. To clarify what kind of underlay material is effective in suppressing this diffusion, we calculated the dependence of groove depth on the kind of underlay material. The calculation showed that the groove depth of the Al film decreases in the order: Al/Ta, Al/W, and Al/TiN while that of the Cu film More >