B. F. Romanowicz¹, M. H. Zaman¹, S. F. Bart¹, V. L. Rabinovich¹, I. Tchertkov¹, S. Zhang¹, M. G. da Silva¹, M. Deshpande¹, K. Greiner¹, J. R. Gilbert¹, Shawn Cunningham²

CMES-Computer Modeling in Engineering & Sciences, Vol.1, No.1, pp. 45-64, 2000, DOI:10.3970/cmes.2000.001.045

Abstract Development of micro-electro-mechanical systems (MEMS) products is currently hampered by the need for design aids, which can assist in integration of all domains of the design. The cross-disciplinary character of microsystems requires a top-down approach to system design which, in turn, requires designers from many areas to work together in order to understand the effects of one sub-system on another. This paper describes current research on a methodology and tool-set which directly support such an integrated design process. More >

S. Taschini¹, J. Müller², A. Greiner², M. Emmenegger¹, H. Baltes¹, J.G. Korvink²

CMES-Computer Modeling in Engineering & Sciences, Vol.1, No.1, pp. 31-44, 2000, DOI:10.3970/cmes.2000.001.031

Abstract We present three techniques to accurately model the thermomechanical response of microsystem components: a new, accurate and stable Kirchhoff-Love multi-layered plate model implemented as an Argyris finite element, a model for the amplitude fluctuations of vibrational modes in micro-mechanical structures within a gaseous environment, and the consistent refinement of a finite element mesh in order to maximize the computational accuracy for a given mesh size. We have implemented these techniques in our in-house MEMS finite element program and accompanying Monte Carlo simulator. We demonstrate our approach to dynamic modeling by computing the thermomechanical response of More >

Per Ljung¹, Martin Bächtold², Mirko Spasojevic²

CMES-Computer Modeling in Engineering & Sciences, Vol.1, No.1, pp. 21-30, 2000, DOI:10.3970/cmes.2000.001.021

Abstract This paper presents AutoMEMS®, a numerical simulation environment to efficiently analyze the behavior of large real-world MEMS designs. By automating surface-based model generation, meshing and field solver tools, it is possible to rapidly model large complex MEMS devices. More >

Zhenjun Zhu, Chang Liu¹

CMES-Computer Modeling in Engineering & Sciences, Vol.1, No.1, pp. 11-20, 2000, DOI:10.3970/cmes.2000.001.011

Abstract We present results on the development of an anisotropic crystalline etching simulation (ACES) program based on a new continuous Cellular Automata (CA) model, which provides improved spatial resolution and accuracy compared with the conventional and the stochastic CA \mbox{methods}. Implementation of a dynamic CA technique provides increased simulation speed and reduced memory requirement (5x). A first ACES software based on common personal computer platforms has been realized. Simulated results of etching match well with experiments. We have developed a new methodology to obtain the etch-rate diagram of anisotropic etching efficiently using both experimental and numerical More >

Philippe Matagne¹, Jean-Pierre Leburton², Jacques Destine, Guy Cantraine³

CMES-Computer Modeling in Engineering & Sciences, Vol.1, No.1, pp. 1-10, 2000, DOI:10.3970/cmes.2000.001.001

Abstract We investigate the quantum mechanical properties and single-electron charging effects in vertical semiconductor quantum dots by solving the Schrödinger and Poisson (SP) equations, self-consistently. We use the finite element method (FEM), specifically the Bubnov-Galerkin technique to discretize the SP equations. Owing to the cylindrical symmetry of the structure, the mesh is generated from hexahedral volume elements. The fine details of the electron spectrum and wavefunctions in the quantum dot are obtained as a function of macroscopic parameters such as the gate voltage, device geometry and doping level. The simulations provide comprehensive data for the analysis More >