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  • Open Access

    ARTICLE

    Mixed Salt-Assisted Growth of Large-Size Ultrathin SnS2 Nanosheets and Their Anisotropy Study

    Yulong Lian1, Ruiqiang Wang1, Ziyan Ding1, Jinyang Liu1,2,3,*

    Chalcogenide Letters, Vol.23, No.5, 2026, DOI:10.32604/cl.2026.083268 - 02 June 2026

    Abstract The morphological regularity, thickness uniformity, and size controllability of two-dimensional materials play a crucial role in regulating their physicochemical properties. However, achieving a synergistic balance among these three factors remains a key challenge in the field. In this study, through a systematic investigation of 36 salt-assisted growth systems, we discovered that CsCl promotes the lateral growth of SnS2, while KI optimizes the crystal morphology. Using a CsCl/KI mixed salt system, we successfully grew triangular, ultrathin, large-area SnS2 nanosheets with a size exceeding 200 μm and a thickness of only 1.8 nm. Angle-resolved polarized Raman spectroscopy (ARPRS)… More >

  • Open Access

    ARTICLE

    Zn Vacancy-Regulated Zn0.4Cd0.6S for Enhanced Charge Separation and Boosted Photocatalytic H2O2 Generation

    Yuanyi Zhang, Yang Gu, Yuxin Lan, Zhenyu Wang, Wei Yan, Yingcong Wei, Jing Xu*

    Chalcogenide Letters, Vol.23, No.5, 2026, DOI:10.32604/cl.2026.082986 - 02 June 2026

    Abstract Photocatalytic H2O2 synthesis from O2 is a green and environmentally friendly route. However, due to the limitations of quick recombination of photogenerated electrons and limited O2 activation ability, photocatalytic reactions often exhibit low efficiency. In this study, Zn vacancy-engineered Zn0.4Cd0.6S (ZnV-ZCS) photocatalysts were successfully constructed via a hydrothermal strategy using L-cysteine as a coordination agent. The optimized ZnV-ZCS-10 catalyst achieves an impressive H2O2 production rate of 44.39 mmol/g within 1 h under 425 nm irradiation, approximately 2.3 times higher than that of pristine Zn0.4Cd0.6S (ZCS). Structural characterization and cycling performance tests confirm that the introduction of Zn vacancies does More > Graphic Abstract

    Zn Vacancy-Regulated Zn<sub>0.4</sub>Cd<sub>0.6</sub>S for Enhanced Charge Separation and Boosted Photocatalytic H<sub>2</sub>O<sub>2</sub> Generation

  • Open Access

    ARTICLE

    Design and Optimization of a Novel Double-Heterojunction Lead-Free Cs2BiAgI6 Perovskite Solar Cell with PCBM/C60 Bilayer ETL and CdTe HTL: Numerical Investigation

    S. D. Al-Sahafi*

    Chalcogenide Letters, Vol.23, No.5, 2026, DOI:10.32604/cl.2026.082364 - 02 June 2026

    Abstract In this study, a lead-free double perovskite solar cell structure based on Cs2BiAgI6 was simulated and optimized to enhance photovoltaic performance. The device architecture follows the configuration: ITO/PCBM/C60/Cs2BiAgI6/CdTe/Au. The thicknesses of the electron transport layer (ETL), absorber layer, and hole transport layer (HTL) are systematically optimized to evaluate their impact on key performance parameters. The results indicate that optimal performance is achieved with 600 nm thicknesses for all ETLs and HTL, and 2 μm for the Cs2BiAgl6 absorber. Under these conditions, the device exhibits a short-circuit current density of 23.23 mA/cm2, an open-circuit voltage of 1.08 V, More >

  • Open Access

    ARTICLE

    Annealing-Induced Structural and Optical Modifications in SnS Thin Films and Their Impact on CO2 Gas Sensing Performance

    Seham Hassan Salman1, Sarmad Mahdi Ali1, Hawraa Hadi2,*, Dhufr Hadi3

    Chalcogenide Letters, Vol.23, No.5, 2026, DOI:10.32604/cl.2026.081302 - 02 June 2026

    Abstract Films of (SnS) with a thickness of 400 nm were deposited by the thermal evaporation technique to investigate the influence of annealing temperature on their Physics and CO2 gas-sensing characteristics. The deposited films were annealed at 200, 300, and 400°C. Structural characterization was performed using XRD, and the obtained results revealed that all samples possessed an orthorhombic crystal structure with a preferred orientation (301). The annealing treatment significantly improved the crystallinity of the films and reduced structural defects and lattice strain. Surface morphology investigations were performed using atomic force microscopy (AFM), which revealed noticeable modifications in… More >

  • Open Access

    ARTICLE

    Photoelectric Properties of Amorphous Selenium Thin Films Deposited by Thermal Evaporation

    Zhadyra Toreniyaz1, Guzal Ismailova1, Oleg Prikhodko1, Zhasulan Nakysbekov1, Tilek Kuanyshbekov2, Nurkadam Tolep1, Dmitry Terekhov3, Zhandos Tolepov1,*

    Chalcogenide Letters, Vol.23, No.5, 2026, DOI:10.32604/cl.2026.081101 - 02 June 2026

    Abstract Amorphous selenium (a-Se) thin films were deposited by vacuum thermal evaporation and investigated in planar photoconductive structures to evaluate their optical and photoelectrical properties in the low-field regime. SEM analysis showed continuous film coverage with a thickness of about 250 nm. Raman spectroscopy and X-ray diffraction confirmed the amorphous structure of the as-deposited films and the formation of trigonal crystalline selenium after annealing. Optical analysis based on transmission and reflectance spectra yielded an optical band gap E g = 1.96   eV and an Urbach energy E U = 0.083   eV ,… More >

  • Open Access

    ARTICLE

    First-Principles Insights into the Structural and Physical Properties of AgSbS2

    Tianjing Li1,*, Min Yao1, Wei Li1, Yue Yang1, Luping Qu1, Haijun Hou2, Hongli Guo3

    Chalcogenide Letters, Vol.23, No.5, 2026, DOI:10.32604/cl.2026.080386 - 02 June 2026

    Abstract This study focuses on monoclinic system AgSbS2, employing first-principles methods to calculate the structural, mechanical, optical, and thermodynamic properties. Specifically, geometry optimization yields a stable atomic structure with optimized lattice constants (a = 12.82 Å, b = 4.41 Å, and c = 13.19 Å). Furthermore, electronic structure analysis identifies AgSbS2 as a direct bandgap semiconductor with a bandgap of 1.456 eV, where the valence and conduction bands primarily originate from Ag-4d, S-3s, and Sb-5p states. Regarding the elastic properties, the calculated elastic constants, combined with Pugh’s B/G criterion, reveal excellent ductility. As for the optical properties, the static More >

  • Open Access

    Review of the Application of Tellurium and Tellurides in Sodium Metal Batteries

    Shan Yuan1,2, Fei Wang2,*, Jinping Zhang2,*, Yuxin Jiang2, Kaibo Gu2, Chenhao Qiao2, Yutong Bai2, Jie Yu2, Quan Chen1, Dedi Han3

    Chalcogenide Letters, Vol.23, No.4, 2026, DOI:10.32604/cl.2026.082805 - 09 May 2026

    Abstract Sodium metal batteries stand as a highly promising electrochemical energy storage system; however, their commercialization is severely impeded by challenges such as anode dendrite formation, the shuttle effect of highly reactive intermediates at the cathode, electrode volume expansion, and interfacial instability. Owing to their high electronic conductivity, high theoretical specific capacity, and superior sodiumphilic affinity, tellurium and its tellurides have emerged as pivotal functional materials for enhancing the performance of sodium metal batteries. This study reviews the advancements in their applications within sodium metal batteries, elaborates rational design strategies carbon-based composites, alloying, and heterostructure construction More >

  • Open Access

    ARTICLE

    Self-Assembled MoS2/Graphene Oxide Hybrid Structures for High-Capacity Supercapacitors: A Scalable Approach

    Mohsin Sayeed1,*, O. P. Singh1, Vishal Singh Chandel2, Azam Raza3, Kamal Batcha Mohamed Ismail4, Mayur Khan5, Navshad Alam6,7, Mohammad Shariq8

    Chalcogenide Letters, Vol.23, No.4, 2026, DOI:10.32604/cl.2026.079721 - 09 May 2026

    Abstract An eco-friendly one-pot hydrothermal method was developed to synthesize molybdenum disulfide/graphene oxide (MoS2/GO) nanocomposites for high-performance supercapacitor applications. X-ray diffraction (XRD) analysis confirmed the presence of the MoS2 crystalline phase, with reduced peak intensities upon GO incorporation, indicating suppressed crystallite growth. Scanning electron microscopy (SEM) revealed rod-like MoS2 structures uniformly distributed across layered GO sheets, and energy-dispersive spectroscopy (EDS) confirmed the presence of Mo, S, C, and O elements. Raman and FTIR analyses verified strong interfacial interactions between MoS2 and GO. Brunauer–Emmett–Teller (BET) measurements revealed a mesoporous structure with a specific surface area of ~31.7 m2 g−1 and… More >

  • Open Access

    ARTICLE

    Structural and Optical Properties of Cu2ZnSn(S1−xSex)4 Nanostructures Thin Film for Photovoltaic Applications

    Bushra A. Hasan1, Ameer J. Fadhl2, Ahmad A. Hasan1, Yasser A. Jebbar3,*

    Chalcogenide Letters, Vol.23, No.4, 2026, DOI:10.32604/cl.2026.079634 - 09 May 2026

    Abstract Copper zinc tin sulfide selenide, Cu2ZnSn(S1−xSex)4, absorbers are promising earth-abundant and environmentally benign materials for low-cost photovoltaic applications. This study investigates the structural and optical properties of Cu2ZnSn(S1−xSex)4 nanostructured thin films prepared by pulsed laser deposition using melt-quenched targets with selenium compositions x = 0.0–1.0. X-ray diffraction revealed that films with low selenium content remained amorphous, whereas higher selenium incorporation promoted the formation of polycrystalline kesterite–stannite phases with preferred orientations along (112), (200), (220), and (312). The crystallite size increased from 12.3 to 17.9 nm as selenium reached x = 1.0, indicating enhanced crystal growth. Atomic force… More >

  • Open Access

    ARTICLE

    Effect of Rays on the Impedance Spectrum of Solid Solutions of the (TlGaSe2)1−x(TlInS2)x

    A. A. Orujova1, T. F. Yusibova1, R. Sh. Agayeva1, G. A. Ismayilbeyli1, N. I. Guliyev2,*

    Chalcogenide Letters, Vol.23, No.4, 2026, DOI:10.32604/cl.2026.077900 - 09 May 2026

    Abstract Warburg impedance models the process of diffusion of mobile ions from the electrode to the diffusion layer under a sinusoidal voltage applied at one polarity of an electrochemical cell, and the diffusion of mobile ions to the electrode at the other polarity. As a result, the process does not go beyond the diffusion layer. In this case, the diffusion of Tl+1 ions in the T l I n S 2 crystal (as well as in solid solutions) after 25 Mrad irradiation is considered to be responsible for the formation of the Warburg diffusion impedance. More >

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