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Multidimensional Semiconductor Device and Micro-Scale Thermal Modeling Using the PROPHET Simulator with Dial-an-Operator Framework

Anand L. Pardhanani1, Graham F. Carey1

1 TICAM, The University of Texasat Austin, USA.

Computer Modeling in Engineering & Sciences 2000, 1(1), 141-150. https://doi.org/10.3970/cmes.2000.001.141

Abstract

Rapid prototyping tools that combine powerful numerics with a flexible applications interface can play a significant role in micro-scale modeling and simulation. We demonstrate this idea using the PROPHET simulator. In the first part of the investigations we extend the simulator's capability to allow analysis of carrier transport in deep submicron MOSFETs using a hydrodynamic model. The model is numerically implemented within PROPHET's dial-an-operator framework by adding certain "flux'' routines. Once implemented, the model becomes available for use in any number of spatial dimensions. We present results for MOSFET type test problems in one and two dimensions. The second application area that we explore here using the same simulator is micro-thermal analysis. The implementation of the thermal equation in PROPHET is demonstrated and results are presented for a test problem in three dimensions.

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APA Style
Pardhanani, A.L., Carey, G.F. (2000). Multidimensional semiconductor device and micro-scale thermal modeling using the PROPHET simulator with dial-an-operator framework. Computer Modeling in Engineering & Sciences, 1(1), 141-150. https://doi.org/10.3970/cmes.2000.001.141
Vancouver Style
Pardhanani AL, Carey GF. Multidimensional semiconductor device and micro-scale thermal modeling using the PROPHET simulator with dial-an-operator framework. Comput Model Eng Sci. 2000;1(1):141-150 https://doi.org/10.3970/cmes.2000.001.141
IEEE Style
A.L. Pardhanani and G.F. Carey, "Multidimensional Semiconductor Device and Micro-Scale Thermal Modeling Using the PROPHET Simulator with Dial-an-Operator Framework," Comput. Model. Eng. Sci., vol. 1, no. 1, pp. 141-150. 2000. https://doi.org/10.3970/cmes.2000.001.141



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