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3-Dimensional Analysis of Flow Patterns and Temperature Profiles for the Growth of InGaSb by Rotational Bridgman Method

T. Ozawa1, N. Ishigami1, Y. Hayakawa2, T. Koyama2, M. Kumagawa2
Shizuoka Institute of Science and Technology, Toyosawa 2200-2, Fukuroi 437-8555, Japan.
Research Institute of Electronics, Shizuoka University, Johoku 3-5-1, Hamamastu 432-8011, Japan

Computer Modeling in Engineering & Sciences 2000, 1(2), 1-6. https://doi.org/10.3970/cmes.2000.001.161

Abstract

To investigate the solution convection in the rotational Bridgman method, both flow patterns and temperature distributions were calculated by solving three equations in 3-dimensional analysis: Navier-Stokes, continuity and energy. We focused on the relationship between ampoule rotational rate and temperature distribution in the growth solution reservoir. In the 3-dimensional model, In-Ga-Sb solution was put between GaSb seed and feed crystals, where seed and feed crystals were cylindrical in shape, and the In-Ga-Sb solution was semi-cylindrical. The ampoule rotational rate was changed in a range of 0 to 100 rpm. By increasing the ampoule rotational rate, the flow velocity in the In-Ga-Sb solution increased and the temperature distribution tended to be uniform.

Keywords

InGaSb, thermal convection, ampoule rotation, Bridgman method

Cite This Article

Ozawa, T., Ishigami, N., Hayakawa, Y., Koyama, T., Kumagawa, M. (2000). 3-Dimensional Analysis of Flow Patterns and Temperature Profiles for the Growth of InGaSb by Rotational Bridgman Method. CMES-Computer Modeling in Engineering & Sciences, 1(2), 1–6.



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