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Dislocation Nucleation and Propagation During Thin Film Deposition Under Tension

W. C. Liu, S. Q. Shi, C. H. Woo, Hanchen Huang1
Email address: Hanchen.Huang@polyu.edu.hk, and hanchen@rpi.edu after summer 2002
Department of Mechanical Engineering, The Hong Kong Polytechnic University, Hong Kong

Computer Modeling in Engineering & Sciences 2002, 3(2), 213-218. https://doi.org/10.3970/cmes.2002.003.213

Abstract

Using molecular dynamics method, we study the nucleation of dislocations and their subsequent propagation during the deposition of tungsten thin films under tension. Aiming to reveal the generic mechanisms of dislocation nucleation during the deposition of polycrystalline thin films, the case of tungsten on a substrate of the same material is considered. The substrate is under uniaxial tension along the [111] direction, with the thermodynamically favored (01ˉˉ1) surface being horizontal. The simulation results indicate that the nucleation starts with a surface step, where a surface atom is pressed into the film along the [111ˉˉ] direction. This process leads to the generation of a half dislocation loop of Burgers vector 1/2[111ˉˉ] along the (112) plane, which is about 73° from the horizontal plane. The dislocation propagates along the [3ˉˉ11] direction. As a result of the dislocation nucleation, a sharp surface step is eliminated.

Keywords

dislocation nucleation, dislocation propagation, thin films, and molecular dynamics.

Cite This Article

Liu, W. C., Shi, S. Q., Woo, C. H., Huang, H. (2002). Dislocation Nucleation and Propagation During Thin Film Deposition Under Tension. CMES-Computer Modeling in Engineering & Sciences, 3(2), 213–218.



This work is licensed under a Creative Commons Attribution 4.0 International License , which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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