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A fast Monte-Carlo Solver for Phonon Transport in Nanostructured Semiconductors

Mei-Jiau Huang1, Tung-Chun Tsai1, Liang-Chun Liu1,2, Ming-shan Jeng2, Chang-Chung Yang2
Mechanical Engineering Department, National Taiwan University, Taipei, Taiwan
Energy & Environment Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan

Computer Modeling in Engineering & Sciences 2009, 42(2), 107-130. https://doi.org/10.3970/cmes.2009.042.107

Abstract

We develop a Monte-Carlo simulator for phonon transport in nanostructured semiconductors, which solves the phonon Boltzmann transport equation under the gray medium approximation. Proper physical models for the phonon transmission/reflection at an interface between two different materials and proper numerical boundary conditions are designed and implemented carefully. Most of all, we take advantage of geometric symmetry that exists in a system to reduce the computational amount. The validity and accuracy of the proposed MC solver was successfully verified via a 1D transient conduction problem and the cross-plane (1D) and in-plane (2D) phonon transport problems associated with Si/Ge superlattice thin films.

Keywords

Monte-Carlo simulator, phonon transport, gray medium approximation, nanostructures.

Cite This Article

Huang, M., Tsai, T., Liu, L., Jeng, M., Yang, C. (2009). A fast Monte-Carlo Solver for Phonon Transport in Nanostructured Semiconductors. CMES-Computer Modeling in Engineering & Sciences, 42(2), 107–130.



This work is licensed under a Creative Commons Attribution 4.0 International License , which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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