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Electromechanical Grain Boundary Model with Formation Mechanism in Polycrystalline Ferroelectrics

Xuhui Lou1, Xu Hou2, Jie Wang3, Xiaobao Tian1,*

1 Department of Mechanics and Engineering, Sichuan University, Chengdu, 610065, China
2 Department of Industrial and Systems Engineering, Research Institute for Advanced Manufacturing, The Hong Kong Polytechinic University, Hong Kong SAR, China
3 Department of Engineering Mechanics, Zhejiang University, Hangzhou, 310027, China

* Corresponding Author: Xiaobao Tian. Email: email

The International Conference on Computational & Experimental Engineering and Sciences 2025, 34(1), 1-1. https://doi.org/10.32604/icces.2025.011045

Abstract

Grain boundaries (GBs) are transitional, defective, and anisotropic interfaces between adjacent grains with different orientations. However, most models assume that the GB is an isotropic dielectric determined by itself and lacks formation information; these assumptions hinder the theoretical investigation of the effect GBs have on polycrystalline ferroelectrics at the mesoscopic scale. Here, a novel GB model based on the formation mechanism is established for ferroelectric polycrystals. It has been found that the Curie-Weiss temperature range, elastic coefficient, and permittivity of GBs are related to the orientation of adjacent grains and the polarization state. The shielding effect, polarization enhancement, domain continuity, and spontaneous polarization on the GBs are obtained in mesoscopic simulations based on this model. In addition, the proportion of GBs can significantly affect the electric field distribution in grains. It provides a mechanistic explanation for the relationship between the coercive electric field and the proportion of GBs in the previous experiment. By achieving a better mesoscopic description of GBs, the GB model proposed in this work provides an effective investigation tool for electromechanical, electro-caloric, and energy storage of polycrystalline functional materials.

Keywords

Grain Boundary; polycrystalline ferroelectrics; domain switching; formation mechanism

Cite This Article

APA Style
Lou, X., Hou, X., Wang, J., Tian, X. (2025). Electromechanical Grain Boundary Model with Formation Mechanism in Polycrystalline Ferroelectrics. The International Conference on Computational & Experimental Engineering and Sciences, 34(1), 1–1. https://doi.org/10.32604/icces.2025.011045
Vancouver Style
Lou X, Hou X, Wang J, Tian X. Electromechanical Grain Boundary Model with Formation Mechanism in Polycrystalline Ferroelectrics. Int Conf Comput Exp Eng Sciences. 2025;34(1):1–1. https://doi.org/10.32604/icces.2025.011045
IEEE Style
X. Lou, X. Hou, J. Wang, and X. Tian, “Electromechanical Grain Boundary Model with Formation Mechanism in Polycrystalline Ferroelectrics,” Int. Conf. Comput. Exp. Eng. Sciences, vol. 34, no. 1, pp. 1–1, 2025. https://doi.org/10.32604/icces.2025.011045



cc Copyright © 2025 The Author(s). Published by Tech Science Press.
This work is licensed under a Creative Commons Attribution 4.0 International License , which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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