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ABSTRACT

Coupling Atomistic and Continuum Finite Element Models: Multi-Scale Simulations of Nanotribological Contacts of Nanometer Scale Coatings

Baolin Wang1

Centre for Advanced Materials Technology (CAMT), School of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, Sydney, NSW 2006, Australia

The International Conference on Computational & Experimental Engineering and Sciences 2008, 8(2), 81-84. https://doi.org/10.3970/icces.2008.008.081

Abstract

When the size of a physical system is smaller than its characteristic dimensions, the macroscopic viewpoint may not be applicable. In addition, experiments at micro/nanometer scale are difficult and the analysis of nano-experimental data is far from simple. This is mostly due to the lack of effective models that are able to study the structural characteristics and mechanics behavior of the micro/nanometer physical systems. Atomic simulation simulation has been used extensively in the investigation of nanoscale phenomena. However, the size limit of atomic simulation is far short to reach the macroscale because of the limitation in computer capacity. Therefore, the atomic simulation alone cannot predict the properties and responses of macroscopic/microscopic materials directly from their nano-structures.

Cite This Article

APA Style
Wang, B. (2008). Coupling atomistic and continuum finite element models: multi-scale simulations of nanotribological contacts of nanometer scale coatings. The International Conference on Computational & Experimental Engineering and Sciences, 8(2), 81-84. https://doi.org/10.3970/icces.2008.008.081
Vancouver Style
Wang B. Coupling atomistic and continuum finite element models: multi-scale simulations of nanotribological contacts of nanometer scale coatings. Int Conf Comput Exp Eng Sciences . 2008;8(2):81-84 https://doi.org/10.3970/icces.2008.008.081
IEEE Style
B. Wang, "Coupling Atomistic and Continuum Finite Element Models: Multi-Scale Simulations of Nanotribological Contacts of Nanometer Scale Coatings," Int. Conf. Comput. Exp. Eng. Sciences , vol. 8, no. 2, pp. 81-84. 2008. https://doi.org/10.3970/icces.2008.008.081



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