C.J. Wordelman, N.R. Aluru, U. Ravaioli¹

CMES-Computer Modeling in Engineering & Sciences, Vol.1, No.1, pp. 121-126, 2000, DOI:10.3970/cmes.2000.001.121

Abstract This paper describes the application of the meshless Finite Point (FP) method to the solution of the nonlinear semiconductor Poisson equation. The FP method is a true meshless method which uses a weighted least-squares fit and point collocation. The nonlinearity of the semiconductor Poisson equation is treated by Newton-Raphson iteration, and sparse matrices are employed to store the shape function and coefficient matrices. Using examples in two- and three-dimensions (2- and 3-D) for a prototypical n-channel MOSFET, the FP method demonstrates promise both as a means of mesh enhancement and for treating problems where arbitrary point placement is advantageous, such… More >

G. Venkata Ramana Reddy^1,*, Y. Hari Krishna¹

FDMP-Fluid Dynamics & Materials Processing, Vol.14, No.3, pp. 213-222, 2018, DOI: 10.3970/fdmp.2018.00411

Abstract The objective of the present problem is to investigate a two-dimensional unsteady flow of a viscous incompressible electrically conducting fluid over a stretching surface taking into account a transverse magnetic field of constant strength. Applying the similarity transformation, the governing boundary layer equations of the problem converted into nonlinear ordinary differential equations and then solved numerically using fourth order Runge-Kutta method with shooting technique. The effects of various parameters on the velocity and temperature fields as well as the skin-friction coefficient and Nusselt number are presented graphically and discussed qualitatively. More >