Gerhard Klimeck1,2, Fabiano Oyafuso2, Timothy B. Boykin3, R. Chris Bowen2, Paul von Allmen4
CMES-Computer Modeling in Engineering & Sciences, Vol.3, No.5, pp. 601-642, 2002, DOI:10.3970/cmes.2002.003.601
Abstract Material layers with a thickness of a few nanometers are common-place in today's semiconductor devices. Before long, device fabrication methods will reach a point at which the other two device dimensions are scaled down to few tens of nanometers. The total atom count in such deca-nano devices is reduced to a few million. Only a small finite number of "free'' electrons will operate such nano-scale devices due to quantized electron energies and electron charge. This work demonstrates that the simulation of electronic structure and electron transport on these length scales must not only be fundamentally quantum mechanical, but it must… More >
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