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Preparation of CdS/g-C3N4 heterojunction photocatalyst with high activity sites by acid treatment

Y. L. Ma*, Y. Y. Tao

College of Physics and Electronic Information Engineering, Qinghai University for Nationalities, Xining 810007, China

* Corresponding Author: email

Chalcogenide Letters 2023, 20(2), 153-164. https://doi.org/10.15251/CL.2023.202.153

Abstract

The key to achieve efficient degradation of organic pollutants lies in improving the separation efficiency of photogenerated electron-hole pairs in photocatalysts. Here, the hydrogen bonds between g-C3N4 layers were broken by concentrated acid etching and exfoliation to obtain a more dispersed and lighter g-C3N4 nanosheet structure, and then the CdS spherical nanoparticles were dispersed on g-C3N4 nanosheets by hydrothermal method. The optimal loading of CdS on g-C3N4 nanosheets was determined by testing the degradation performance of the composite photocatalysts with different loading amounts. The degradation performance was tested by simulating sunlight using a 700-800 W xenon lamp equipped with a 420 nm cut-off filter, which showed that the degradation of MB by 7% CdS/g-C3N4 photocatalyst was 90.7% for MB. It indicates that concentrated acid treatment and loading of CdS nanoparticles can significantly improve the photocatalytic activity of g-C3N4 nanosheets, which is attributed to the enhancedup conversion function of g-C3N4 by loading CdS to enhance the response range and ability of g-C3N4 in visible light and the photogenerated electron-hole pair separation rate by loading CdS, thus improving the photocatalytic performance of the composite.

Keywords

CdS/g-C3N4, Photocatalytic, High activity sites

Cite This Article

APA Style
Ma, Y.L., Tao, Y.Y. (2023). Preparation of CdS/g-C3N4 heterojunction photocatalyst with high activity sites by acid treatment. Chalcogenide Letters, 20(2), 153–164. https://doi.org/10.15251/CL.2023.202.153
Vancouver Style
Ma YL, Tao YY. Preparation of CdS/g-C3N4 heterojunction photocatalyst with high activity sites by acid treatment. Chalcogenide Letters. 2023;20(2):153–164. https://doi.org/10.15251/CL.2023.202.153
IEEE Style
Y.L. Ma and Y.Y. Tao, “Preparation of CdS/g-C3N4 heterojunction photocatalyst with high activity sites by acid treatment,” Chalcogenide Letters, vol. 20, no. 2, pp. 153–164, 2023. https://doi.org/10.15251/CL.2023.202.153



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