Open Access
ISSN:1584-8663 (online)
Publication Frequency:Monthly
Chalcogenide Letters is published monthly (12 issues per year), covering a wide range of fundamental and applied research in the field of chalcogenide materials. The journal is open to letters, short communications and breakings news inserted as Short Notes, in the field of chalcogenide materials either amorphous or crystalline. Short papers in structure, properties and applications, as well as those covering special properties in nano-structured chalcogenides are admitted. Papers based on chalcogenide advanced nanomaterials with possible applications in electronics, optoelectronics, and photonics are encouraged. Also, articles on alternative and renewable energy sources in the field of chalcogenides are accepted for submission. Cross-fertilization of both crystalline and amorphous field in this special class of materials is one of the purposes of this Journal.
Science Citation Index Expanded (SCIE): 2025 Impact Factor 1.6; Web of Science; Scopus Citescore (Impact per Publication 2024): 2.2; SNIP (Source Normalized Impact per Paper 2024): 0.637; Journal Citation Reports (JCR); Google Scholar; CROSSREF; ROAD; OPENALEX.
Effective starting from the first issue of 2026, the Chalcogenide Letters (CL) will be published by Tech Science Press (TSP). This transition is designed to enhance the journal’s academic impact and global visibility while ensuring an improved publishing experience for researchers. The journal's aims, scope, and formatting guidelines will remain unchanged. The journal's Editor-in-Chief, Prof. Ching-Hwa Ho, and the editorial board will continue to lead the iournal toward an even more successful future.
We appreciate the ongoing support of our authors, reviewers, and readers as we embark on this exciting new chapter.
Open Access
ARTICLE
Chalcogenide Letters, Vol.23, No.7, 2026, DOI:10.32604/cl.2026.082607 - 07 August 2026
（This article belongs to the Special Issue: New Horizons in Structural Design and Experimental Synthesis of Chalcogenide-based Materials for Energy Storage and Conversion)
Abstract This study investigates the structural evolution and DC electrical properties of Pb50−xGexTe50 ternary chalcogenide alloys with varying germanium concentrations (x = 5, 10, 15, 20). Synthesized via the melt-quenching technique, the alloys were characterized using Scanning Electron Microscopy (SEM) and temperature-dependent electrical resistivity measurements within the range of 290–475 K. Microstructural analysis revealed that increasing Ge substitution significantly promotes matrix densification, reducing porosity and improving inter-granular connectivity. The DC conductivity exhibits a systematic increase with Ge content up to x = 15, attributed to the increased density of defect states. For instance, as Ge content increases… More >
Open Access
ARTICLE
Chalcogenide Letters, Vol.23, No.7, 2026, DOI:10.32604/cl.2026.084991 - 07 August 2026
Abstract Semiconductor quantum dots (QDs) with tunable narrow bandgaps have emerged as promising materials for next-generation near-infrared (NIR) optoelectronic and photovoltaic devices because their optical properties can be tailored through composition and quantum confinement. Among IV–VI chalcogenide nanomaterials, quaternary alloy systems provide greater compositional flexibility than conventional binary and ternary counterparts; however, PbSnSeS quantum dots remain largely unexplored despite their potential for broadband infrared applications. Here, the structural, electronic, and optical properties of PbSnSeS quaternary QDs synthesized by a one-pot colloidal hot-injection method are systematically investigated. The crystalline IV–VI chalcogenide phase and successful quaternary alloy formation… More >
Open Access
ARTICLE
Chalcogenide Letters, Vol.23, No.7, 2026, DOI:10.32604/cl.2026.085815 - 07 August 2026
Abstract A novel quaternary selenide, EuErAgSe3, has been synthesized for the first time. The phase forms upon annealing in the 1120–1800 K range and retains its crystal structure upon cooling to ambient conditions. The phase was prepared by the ampoule method from EuSe and AgErSe2 powders, followed by annealing at 1270 ± 10 K for up to 300 h. Powder X-ray diffraction revealed that EuErAgSe3 crystallizes in the AgBiS2 structure type (space group Fm-3m) with the lattice parameter a = 5.95322(14) Å. The microhardness of the phase is 340 ± 15 HV. The optical band gap for direct transitions More >
Open Access
ARTICLE
Chalcogenide Letters, Vol.23, No.7, 2026, DOI:10.32604/cl.2026.086724 - 07 August 2026
Abstract In this work, Ge45As40Se15 chalcogenide glass was prepared using spark plasma sintering. This method synthesizes glass powder into blocks through a certain temperature and pressure, which is an effective densification and high-precision molding of infrared transparent blocks and lenses. Through X-ray diffraction (XRD) and differential scanning calorimetry analysis, we tracked the gradual evolution of the powder during ball milling and observed the existence of a glass transition temperature in the glass after powder hot pressing. This method can prepare components outside the conventional glass forming region with high hardness and infrared transmittance, providing a simple and More >
Open Access
ARTICLE
Chalcogenide Letters, Vol.23, No.7, 2026, DOI:10.32604/cl.2026.085371 - 07 August 2026
Abstract Nanopowder copper sulphide CuS has been synthesised successfully via the chemical bath deposition method. Two samples of precipitated CuS nanopowder were prepared at molar concentration of 0.5 M from [CuSO4·5H2O and Na2S2O3·5H2O] and 0.05 M from [Na2EDTA·2H2O]. Both samples were annealed at 150°C for one hour in air. The effects of washing and nonwashing on the structural, morphological, and compositional properties were studied. The X-ray diffraction (XRD) patterns showed that both samples have a CuS hexagonal structure with lattice constants (a = 3.773
Open Access
Chalcogenide Letters, Vol.23, No.7, 2026, DOI:10.32604/cl.2026.087725 - 07 August 2026
Abstract The power conversion efficiency of perovskite solar cells has increased rapidly; however, interfacial-defect-induced non-radiative recombination, ion migration, and sensitivity to moisture, oxygen, and thermal stress continue to cause open-circuit voltage losses and a limited operational lifetime. Owing to its tunable energy levels, high carrier mobility, and compact hydrophobic layered structure, two-dimensional MoS2 can serve as an electron or hole transport layer, an interfacial buffer layer, or an additive, enabling favorable energy-level alignment and optimized interfacial charge-transfer kinetics, thereby promoting carrier extraction and suppressing recombination. The sulfur sites of MoS2 can coordinate with undercoordinated Pb2+ to form Pb–S… More >
Graphic Abstract
Open Access
ARTICLE
Chalcogenide Letters, Vol.23, No.7, 2026, DOI:10.32604/cl.2026.085424 - 07 August 2026
Abstract Transition metal dichalcogenides (TMDs) and transition metal trichalcogenides (TMTCs) exhibit tunable electronic properties, and when stacked together in their two dimensional (2D) forms, they can display distinctive electronic properties beyond those of conventional heterostructures. In this study, we fabricated for the first time junction field effect transistor (JFET) by stacking MoSe2, a transition metal dichalcogenide (TMD), with ZrSe3, a transition metal trichalcogenide (TMTC). We characterized its electrical properties, where the device’s electrical characteristics were analyzed based on the stacking sequence. Two device configurations top-gate and bottom-gate JFETs were fabricated and systematically analyzed. Notably, the top-gate JFET More >
Login
Register
Submit a Paper
Propose a Special lssue
