CL Open Access

Chalcogenide Letters

ISSN:1584-8663 (online)
Publication Frequency:Monthly

  • Online
    Articles

    283

  • on board
    editors

    30

Special Issues

About the Journal

Chalcogenide Letters is published monthly (12 issues per year), covering a wide range of fundamental and applied research in the field of chalcogenide materials. The journal is open to letters, short communications and breakings news inserted as Short Notes, in the field of chalcogenide materials either amorphous or crystalline. Short papers in structure, properties and applications, as well as those covering special properties in nano-structured chalcogenides are admitted. Papers based on chalcogenide advanced nanomaterials with possible applications in electronics, optoelectronics, and photonics are encouraged. Also, articles on alternative and renewable energy sources in the field of chalcogenides are accepted for submission. Cross-fertilization of both crystalline and amorphous field in this special class of materials is one of the purposes of this Journal.

Indexing and Abstracting

Science Citation Index Expanded (SCIE): 2023-2024 Impact Factor 1.3; Web of Science; Elsevier’s Scopus; Journal Citation Reports (JCR); Google Scholar; CROSSREF; ROAD; OPENALEX.

Effective starting from the first issue of 2026, the Chalcogenide Letters (CL) will be published by Tech Science Press (TSP). This transition is designed to enhance the journal’s academic impact and global visibility while ensuring an improved publishing experience for researchers. The journal's aims, scope, and formatting guidelines will remain unchanged. The journal's Editor-in-Chief, Prof. Ching-Hwa Ho, and the editorial board will continue to lead the iournal toward an even more successful future.
We appreciate the ongoing support of our authors, reviewers, and readers as we embark on this exciting new chapter.

  • Open Access

    ARTICLE

    Spin-Coated Kesterite Based CZTS (Cu2ZnSnS4) Thin Films: Structural, Optical, and Compositional Analysis for Photovoltaic Applications

    Md. Rakib Hasan1, Afrina Sharmin2, Mimi Mondal1,3, Md. Ahasan Habib1, Rinku Majumder1, Muhammad Shahriar Bashar2,*, Md. Salahuddin Mina1,*

    Chalcogenide Letters, Vol.23, No.3, 2026, DOI:10.32604/cl.2026.079270 - 03 April 2026
    Abstract In this work, spin-coated Cu2ZnSnS4 (CZTS) thin films with systematically varied thicknesses were investigated to understand their influence on structural, compositional, and optical properties relevant to high-performance photovoltaic applications. CZTS absorber layers were fabricated using a sol-gel spin-coating technique, which offers simplicity, low cost, and excellent thickness control, followed by annealing at 450°C under a nitrogen atmosphere to promote crystallization and phase formation. X-ray diffraction (XRD) analysis revealed that films with a thickness of approximately 608 nm exhibited the highest crystallinity and a preferred orientation along the (112) plane, indicating enhanced structural order and improved grain… More >

  • Open Access

    ARTICLE

    High-Efficiency Double-Heterojunction Based Dual-Absorber Perovskite Solar Cell via Numerical Optimization

    Soheib Dakhelullah Alsahafi*

    Chalcogenide Letters, Vol.23, No.3, 2026, DOI:10.32604/cl.2026.077336 - 03 April 2026
    Abstract In this study, a novel double-heterojunction perovskite solar cell (DHPSC) with the following structure: FTO/ZnO/CH3NH3PbI3−xClx/CH3NH3SnI3/p++ZnTe/Au was designed. It was optimized using the wxAMPS simulation software. A systematic parametric analysis was performed to investigate the influence of electron transport layer (ETL) ZnO and hole transport layer (HTL) thicknesses on photovoltaic performance. That includes short-circuit current density (Jsc), open-circuit voltage (Voc), fill factor (FF), and power conversion efficiency (η). The results indicate that once a minimum ZnO thickness is achieved, further increases have a negligible effect on performance. Whereas variations in ZnTe thickness markedly influence Voc and η. The optimal configuration More >

  • Open Access

    ARTICLE

    Corrosion and Wear Resistance of Electro-Deposited Zn–Ni/ZnS Nanocomposite Coatings on Mild Steel for Mechanical Applications

    Wei Kang1,*, Juan Jin2

    Chalcogenide Letters, Vol.23, No.3, 2026, DOI:10.32604/cl.2026.077859 - 03 April 2026
    Abstract A sulfate–chloride electrolyte was used to deposit alloy layers on AISI 1018 coupons while co-introducing ZnS nanoparticles (5–20 g/L) to tune microstructure and durability under combined saline exposure and dry sliding. Cross-sectional SEM confirmed continuous deposits of ~24–26 μm, and XRD indicated γ-phase dominance with pronounced grain refinement: crystallite size decreased from 42 ± 3 nm (particle-free) to 28 ± 2 nm at 15 g/L. In 3.5 wt% NaCl, polarization data showed a progressive ennoblement of Ecorr from −1.032 to −0.981 V (vs. SCE) together with a reduction of icorr from 8.47 to 1.82 μA/cm2 at 15… More >

  • Open Access

    ARTICLE

    Attempting Doping Activation via Rapid Thermal Annealing in As-Doped Polycrystalline CdSeTe Solar Cells

    Yuzhe Gu1, Wenwu Wang1,2, Guanggen Zeng1,2, Xia Hao2,3, Lili Wu1,2, Jingquan Zhang1,2,*

    Chalcogenide Letters, Vol.23, No.3, 2026, DOI:10.32604/cl.2026.079159 - 03 April 2026
    Abstract Doping the absorber layer is a critical process for enhancing the performance of polycrystalline CdSeTe solar cells. Replacing traditional Cu doping with Group V dopants offers a pathway to fabricate devices with improved efficiency and stability. However, the dopant activation rate in polycrystalline structures remains low, typically only a few percent. While rapid thermal annealing (RTA) has been successfully employed to achieve high activation rates in single-crystal CdTe devices, its application to polycrystalline CdSeTe solar cells has been scarcely reported. In this study, we systematically applied multi-step annealing to investigate the dopant activation of in-situ As-doped More >

    Graphic Abstract

    Attempting Doping Activation via Rapid Thermal Annealing in As-Doped Polycrystalline CdSeTe Solar Cells

  • Open Access

    ARTICLE

    Green Synthesis and Characterization of ZnS and ZnS@Ag2S Core–Shell Nanoparticles Using Mint Leaf Extract

    Ruqayah A. Ulwali, Nada K. Abbas*

    Chalcogenide Letters, Vol.23, No.3, 2026, DOI:10.32604/cl.2026.078934 - 03 April 2026
    Abstract In this study, zinc sulfide nanoparticles (ZnS NPs) and zinc sulfide @ Silver sulfide core-shells (ZnS@Ag2S NPs) were prepared using the green method with mint leaf extract as a reducing and coating agent, at varying concentrations of silver nitrate (AgNO3) (0.005, 0.01, and 0.02 M). X-ray diffraction analysis (XRD) results showed the formation of a cubic phase of ZnS NPs and a monoclinic phase of Ag2S with increasing silver nitrate concentration. The average crystalline size of ZnS NPs was calculated to be 2.01 nm and (2.78, 2.65, and 2.13 nm) after Ag2S formation, while the shell (Ag2S) was… More >

  • Open Access

    ARTICLE

    Effect of Annealing on CuZnS Ternary Chalcogenide Thin Films Prepared by Chemical Bath Deposition: An XPS Study

    Preetha K. C.1,2,*, Bini S.2

    Chalcogenide Letters, Vol.23, No.3, 2026, DOI:10.32604/cl.2026.076854 - 03 April 2026
    Abstract The increasing depletion of fossil fuels and the escalation of global temperatures have intensified the need for sustainable energy sources such as solar power. Copper Zinc Sulphide (CuZnS) is a potential absorber for solar cells. This study reports the structure and composition of annealed CuZnS samples using X-ray Photoelectron Spectroscopy (XPS) analysis technique. CuZnS thin films prepared using low-cost chemical bath deposition (CBD) technique are annealed at 100°C, 200°C, and 300°C. The samples are analysed using Energy Dispersive X-ray Spectroscopy (EDX), X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), UV Visible NIR spectroscopy (UV-VIS) and Hall… More >

  • Open Access

    ARTICLE

    FeS2 Film Properties and FeS2/Co-doped SnS2 Heterojunction for Photovoltaics Applications

    Naoual Houaidji1, Kenza Kamli2,*, Zakaria Hadef2, Houssem Eddine Chouial3, Marwa Bendaia1

    Chalcogenide Letters, Vol.23, No.3, 2026, DOI:10.32604/cl.2026.076383 - 03 April 2026
    Abstract We present a systematic investigation of FeS2 thin films deposited by ultrasonic spray pyrolysis (USP) at different deposition times (15–40 min), with the aim of understanding their structural, optical, and electrical evolution and their suitability for heterojunction device applications. Particular attention is given to the integration of the optimized FeS2 layer with a Co-doped SnS2 bottom layer to form a p–n heterojunction. Structural analysis by X-ray diffraction reveals a transition from an amorphous/oxidized phase at short deposition times toward well-crystallized pyrite after 25 min, while the 40-min film exhibits the most intense reflections and the largest crystallite… More >

Copyright © 2026 The Author(s). Published by Tech Science Press.

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