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F. T. Ibrahim^1,*, A. A. Qassim², S. M. A. Al-Dujayli¹
Chalcogenide Letters, Vol.22, No.11, pp. 929-937, 2025, DOI:10.15251/CL.2025.2211.929
Abstract This work, pulse laser deposition technique was employee to synthesize Cu2ZnSnS4 (CZTS) thin films with different lasing energy (500, 600, 700, 800, 900 mJ). Through using different characterization technique to study structural, optical and gas sensing properties. the use of X-ray diffraction, the samples have polycrystalline with cubic structure. The EDX examination showed that the sample contains a suitable amount of Zn, Sn, Cu, and S atoms to form CZTS. UV-VIS measurement indicates that the synthesis of thin films employing a lower laser energy result in a drop in deposit sample thickness, which in turn More >

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Fan He^1,2,3,*, Xu He⁴, Jie Wang¹, Yu Hu⁵
Chalcogenide Letters, Vol.22, No.11, pp. 939-949, 2025, DOI:10.15251/CL.2025.2211.939
Abstract Selenium (Se) has garnered significant attention as a promising wide-bandgap material for photovoltaic applications. However, progress in enhancing the efficiency of Se solar cells remains limited. This study addresses this challenge by targeting the critical emitter/Se absorber interface for performance improvement. Through numerical simulations, we systematically investigate the impact of key interface properties—specifically, band alignment and defect characteristics—on device performance. Our results demonstrate that a slight positive conduction band offset (CBO) effectively strengthens absorber band bending and reduces hole concentration at the Se surface. Furthermore, minimizing interface defect density or incorporating donor-type defects significantly alleviates More >

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Akramjon Y. Boboev^1,*, Ulugbek R. Karimberdiev¹, Sardor R. Kadirov², Nuritdin Y. Yunusaliyev¹
Chalcogenide Letters, Vol.22, No.11, pp. 951-957, 2025, DOI:10.15251/CL.2025.2211.951
Abstract This paper investigates the possibility of growing solid solutions of the composition (Ge₂)_1−x−y(GaAs_1−δBi_δ)_x(ZnSe)_y on silicon substrates using a germanium (Ge) buffer layer. The optimal conditions for obtaining a structurally high-quality epitaxial layer have been determined. In the study, the solid solution was obtained by liquid-phase epitaxy from a bismuth-containing melt solution. Epitaxial growth was carried out in a palladiumpurified hydrogen atmosphere at a cooling rate of 1 ÷ 1.5°C/min in the temperature range 750 ÷ 650°C. Experimental data showed that the growth of the epitaxial film significantly depends on the size of the gap between the… More >

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T. M. Razykov¹, K. M. Kuchkarov¹, R. T. Yuldoshov¹, M. P. Pirimmatov¹, R. R. Khurramov¹, D. Z. Isakov¹, M. A. Makhmudov¹, A. Matmuratov¹, J. G. Bekmirzoyev¹, A. N. Olimov²
Chalcogenide Letters, Vol.22, No.11, pp. 959-964, 2025, DOI:10.15251/CL.2025.2211.959
Abstract This work presents the results of investigating the photovoltaic characteristics of Sb2(SxSe1−x)3 thin film solar cells manufactured on glass substrates with molybdenum coating using the chemical molecular beam deposition method. Illuminated IV and spectral response measurements on Sb₂(S_xSe_1−x)₃ alloy films show that the device with S/(S + Se) = 0.6 delivers the best performance, reaching 6.47% power-conversion efficiency with V_OC = 523 mV, J_SC = 27.2 mA cm⁻² , and a fill factor of 46.71%. More >

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A. B. Rzayeva^1,2,*, F. E. Abbdullayeva¹, S. C. Imanova¹, S. H. Aliyeva^1,2, S. N. Yasinova^1,2
Chalcogenide Letters, Vol.22, No.11, pp. 965-970, 2025, DOI:10.15251/CL.2025.2211.965
Abstract Lead indium selenide (PbIn2Se₄) is a promising chalcogenide semiconductor for optoelectronic and energy applications. We report a hydrothermal synthesis route using ethylene glycol under moderate conditions (433– 453 K, 7–12 h), yielding up to 85–87%. The product crystallized into a cotton-like morphology composed of nanoand microparticles. Structural and compositional integrity were confirmed by chemical analysis, thermogravimetric analysis, and transmission electron microscopy. These results demonstrate that hydrothermal synthesis provides an efficient and controllable pathway to high-purity PbIn2Se₄, opening opportunities for its use in advanced functional devices. More >

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R. Yoga Indra Eniya¹, K. Vijayakumar², B. Vigneashwari^3,*
Chalcogenide Letters, Vol.22, No.11, pp. 971-985, 2025, DOI:10.15251/CL.2025.2211.971
Abstract Nanocrystals (~16 nm) of semiconducting lead sulphide (PbS) were synthesized using the coprecipitation method, which was characterized for phase and compositional purity. These ultrafine particles of PbS exhibited quantum confinement characteristics, which were revealed by blue-shifting in optical absorption using UV-DRS analysis. These QDs of PbS were driven under the influence of the applied electric field using monodispersed colloidal suspension on the Indium-Tin-Oxide (ITO) substrate using the electrophoretic deposition technique (EPD). The formation of self-organized arrays of PbS quantum dots (QDs) and their stacked assemblies was achieved through EPD. Interestingly, neither complexing agents nor templates More >

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Xiaowang Lu^1,*, Cheng Luo¹, Xinyu Zhu¹, Ziwen Gu¹, Chen Da¹, Junyan Zhou¹, Junchao Qian²
Chalcogenide Letters, Vol.22, No.11, pp. 987-995, 2025, DOI:10.15251/CL.2025.2211.987
Abstract Attapulgite clay-supported CdS composites were synthesized via hydrothermal approach and applied to remove Rhodamine B (RhB). The structural, morphological, and physicochemical properties of the materials were systematically characterized by XRD, TEM, XPS, BET and UV-Vis DRS. The combination of CdS and attapulgite could enhance active site availability and surface area, thereby boosting photocatalytic activity.The optimized CdS/attapulgite composite demonstrated remarkable photocatalytic efficiency under visible-light illumination. In addition, a potential photocatalytic degradation mechanism by the composites was proposed. More >

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