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ARTICLE

Growth of Solid Solutions (Ge₂)_1−x−y(GaAs_1−δBi_δ)_x(ZnSe)_y on Silicon Substrates by Liquid Phase Epitaxy

Akramjon Y. Boboev^1,*, Ulugbek R. Karimberdiev¹, Sardor R. Kadirov², Nuritdin Y. Yunusaliyev¹

1 Faculty of Physics and Technology, Andijan State University, Andijan, 170100, Uzbekistan
2 Faculty of Physics, Urgench State University, Urgench, 221100, Uzbekistan

* Corresponding Author: A. Y. Boboev. Email:

Chalcogenide Letters 2025, 22(11), 951-957. https://doi.org/10.15251/CL.2025.2211.951

Received 14 August 2025; Accepted 07 November 2025;

Abstract

This paper investigates the possibility of growing solid solutions of the composition (Ge₂)_1−x−y(GaAs_1−δBi_δ)_x(ZnSe)_y on silicon substrates using a germanium (Ge) buffer layer. The optimal conditions for obtaining a structurally high-quality epitaxial layer have been determined. In the study, the solid solution was obtained by liquid-phase epitaxy from a bismuth-containing melt solution. Epitaxial growth was carried out in a palladiumpurified hydrogen atmosphere at a cooling rate of 1 ÷ 1.5°C/min in the temperature range 750 ÷ 650°C. Experimental data showed that the growth of the epitaxial film significantly depends on the size of the gap between the substrate and the starting material: the average symmetrical gap was 0.8 mm with a dispersion of 0.1 mm. Crystallisation occurred under the combined influence of diffusion and gravitational flow processes. Epitaxial films with a thickness of up to 10 µm demonstrated p-type conductivity with a specific resistance of about 10 Ω∙cm and a carrier concentration of 1.5 × 10¹⁶ cm⁻³ . At a temperature of 750°C, the formation of nanoclusters was observed, which is associated with a 4% mismatch in lattice parameters and a difference in the thermal expansion coefficients of the components. The solid solution (Ge₂)_1−x−y(GaAs_1−δBi_δ)_x(ZnSe)_y (at 0 ≤ x ≤ 0.53, 0 ≤ y ≤ 0.74) was characterised by a gradient composition. At a depth of 1 μm, the GaAs and ZnSe content did not exceed 15% and 12%, respectively.

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Keywords

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