Open Access

ARTICLE

Study and modeling of a CdS /PbS betavoltaic cell by Monte Carlo simulation

H. Moughli^a,*, B. Azeddine^a, Z. Tiouti^a, M. Rajczyk^b

a Laboratory of Semiconductor Devices Physics, University Tahri Mohammed of Bechar, Algeria
b Poltichnika Czestochowska, University of Technology, City, Poland

* Corresponding Author:

Chalcogenide Letters 2023, 20(3), 227-233. https://doi.org/10.15251/CL.2023.203.227

Received 23 December 2022; Accepted 18 March 2023;

Abstract

In this paper, we present simulations of the concentration of electron-hole pairs generated from each point in solid targets under Ni-63 source bombardment of a CdS/PbS-based betavoltaic cell. This model is an accurate representation of the electronic interaction has been reported. We can obtain the distribution of the electron-hole pairs generated in the CdS/PbS junction as a function of the depth by Monte Carlo simulation, this distribution allowed us to find the concentrations of excess minority carriers as a function of the thickness, which can be function and injection into the continuity equations to determine the diffusion current and then the selected petavoltage properties. The model was tested for the Ni-63 CdS/PbS structure, with energy of 17 keV.

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Keywords

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