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A. F. Qasrawi^a,c,*, Hazem K. Khanfar^b
Chalcogenide Letters, Vol.20, No.3, pp. 177-186, 2023, DOI:10.15251/CL.2023.203.177
Abstract Herein voltage and frequency controlled thin film transistors fabricated by depositing SeO₂ onto germanium thin crystals are reported. For these devices measurements of the current-voltage characteristics revealed a biasing dependent rectification ratios. The devices showed metal-oxide-semiconductor character under reverse biasing conditions. In addition, the biasing dependent capacitance and conductance spectral studies in the frequency domain of 20M-1000MHz has shown the possibility of switching the capacitance and negative conductance from negative mode to positive mode. The features of the Ge/SeO₂ devices make them attractive for use in electronic circuits as parasitic capacitive circuit elements, noise reducers, signal More >

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R. S. Ali^a,*, H. S. Rasheed^b, N. D. Abdulameer^c, N. F. Habubi^d, S. S. Chiad^b
Chalcogenide Letters, Vol.20, No.3, pp. 187-196, 2023, DOI:10.15251/CL.2023.203.187
Abstract Chemical spray pyrolysis (CSP) was utilized to create pure Zinc Sulfide (ZnS) and magnesium (Mg) doped thin films on a clean glass substrate at a temperature equal to 400°C. X-ray diffraction test revealed a cubic wurtzite crystal structure with average crystallite sizes of 10.99 and 12.27 nm for ZnS and ZnS: Mg, respectively. XRD analysis of the doped films revealed a polycrystalline structure with a predominant peak along the (220) plane and additional peaks along the (111), (200), and (222) planes. The grain size raised from 10.99 to 12.27 nm as a result of the More >

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Hiba M. Ali^*, I. Khudayer
Chalcogenide Letters, Vol.20, No.3, pp. 197-203, 2023, DOI:10.15251/CL.2023.203.197
Abstract Silver selenide telluride Semiconducting (Ag₂Se_0.8Te_0.2) thin films were by thermal evaporation at RT with thickness350 nm at annealing temperatures (300, 348, 398, and 448) °K for 1 hour on glass substrates .using X-ray diffraction, the structural characteristics were calculated as a function of annealing temperatures with no preferential orientation along any plane. Atomic force microscopy (AFM) and X-ray techniques are used to analyze the Ag₂SeTe thin films' physical makeup and properties. AFM techniques were used to analyze the surface morphology of the Ag₂SeTe films, and the results showed that the values for average diameter, surface roughness, and More >

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I. Nkrumah^*, F. K. Ampong, A. Britwum, M. Paal, B. Kwakye-Awuah, R. K. Nkum, F. Boakye
Chalcogenide Letters, Vol.20, No.3, pp. 205-213, 2023, DOI:10.15251/CL.2023.203.205
Abstract Single phase lead tin sulfide (PbSnS) thin films have been successfully deposited on ITO coated glass substrates using a 3-electrode electrochemical cell having graphite as the counter electrode and Ag/AgCl as the reference electrode. In this single-step electrodeposition, the PbSnS precursor thin film was directly electrodeposited on the conductive substrate from the electrolytic bath solution which contained Pb(NO₃)₂, SnCl₂.2H₂O and Na₂S₂O₃. This was followed by annealing in air at 250 °C for an hour to improve the crystallinity. The annealed films were characterized by a variety of techniques. Powder X-ray diffraction revealed peaks which were indexed to More >

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J. Geng^*, J. Wu
Chalcogenide Letters, Vol.20, No.3, pp. 215-225, 2023, DOI:10.15251/CL.2023.203.215
Abstract First-principles method is performed to investigate the structural, electronic, elastic and mechanical characteristics of the tetragonal CuAlS₂ in the pressure range from 0 to 10 GPa. The results indicated that both the lattice constant and cell volume decrease with the increase of pressure, which are matched well with available previous values. The pressure has a more significant influence on the c direction than the a and b direction. The obtained elastic constants reveal the tetragonal CuAlS₂ is mechanically stable between 0 and 10 GPa. The bulk, shear, and Young’s modulus are evaluated by Voigt-Reuss-Hill approximation. All More >

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H. Moughli^a,*, B. Azeddine^a, Z. Tiouti^a, M. Rajczyk^b
Chalcogenide Letters, Vol.20, No.3, pp. 227-233, 2023, DOI:10.15251/CL.2023.203.227
Abstract In this paper, we present simulations of the concentration of electron-hole pairs generated from each point in solid targets under Ni-63 source bombardment of a CdS/PbS-based betavoltaic cell. This model is an accurate representation of the electronic interaction has been reported. We can obtain the distribution of the electron-hole pairs generated in the CdS/PbS junction as a function of the depth by Monte Carlo simulation, this distribution allowed us to find the concentrations of excess minority carriers as a function of the thickness, which can be function and injection into the continuity equations to determine More >

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