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B. M. Alotaibi^a, Thaqal M. Alhuzaymi^b, Mohammed F. Alotiby^b, Sayed A. Makhlouf^c, Kh. S. Shaaban^d, E. A. Abdel Wahab^c,*
Chalcogenide Letters, Vol.21, No.8, pp. 583-604, 2024, DOI:10.15251/CL.2024.218.583
Abstract The chemical composition of the following glass system 75Li₂B₄O₇-10CdO-(15-x)BaO- xTm₂O₃ (0 ≤ x ≤ 2) mol.% has been fabricated using a traditional melt quenching procedure. The density of the synthesis samples has been measured and it enhanced with the rising Tm₂O₃ content. All the fabricated specimens form glass and the amorphous state have been confirmed the XRD. The spectroscopic investigation indicates an increase in the energy gap from 3.08 to 3.25 eV with increasing Tm₂O₃ concentrations. The refractive index, basicity and static and infinity of dielectric constant were taken place of present investigated. The ultrasonic velocities of More >

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B. K. H. Al-Maiyaly, S. M. Ali, B. H. Hussein, H. K. Hassun^*
Chalcogenide Letters, Vol.21, No.8, pp. 605-613, 2024, DOI:10.15251/CL.2024.218.605
Abstract Copper doped Zinc oxide and (n-ZnO / p-Si and n-ZnO: Cu / p-Si) thin films thru thickness (400±20) nm were deposited by thermal evaporation technique onto two substrates. The influence of different Cu percentages (1%,3% and 5%) on ZnO thin film besides hetero junction (ZnO / Si) characteristics were investigated, with X-ray diffractions examination supports ZnO films were poly crystal then hexagonal structural per crystallite size increase from (22.34 to 28.09) nm with increasing Cu ratio. The optical properties display exceptional optically absorptive for 5% Cu dopant with reduced for optically gaps since 3.1 toward More >

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M. Ishfaq^a, A. Aziz^a, S. A. Aldaghfag^b, S. Noreen^c, M. Zahid^c, M. Yaseen^a,*
Chalcogenide Letters, Vol.21, No.8, pp. 615-629, 2024, DOI:10.15251/CL.2024.218.615
Abstract Herein, structural, optoelectronic, and thermoelectric characteristics of Ba₂CaTeO₆ and Ba₂CaWO₆ oxides double perovskite have been evaluated by first-principles calculations. Enthalpy of formation and tolerance factor are computed to ensure the respective structural and thermodynamical stability. Ba₂CaTeO₆ and Ba₂CaWO₆ have mBJ computed bandgaps of 5.87 eV and 4.20 eV, respectively. Furthermore, the optical parameters like dielectric constants (ԑ₁(ω) & ԑ₂(ω)) and other related parameters are computed. The thermoelectric (TE) parameters were examined using the BoltzTraP package. The ZT values of Ba₂Ca(Te/W)O₆ at 450 K are 0.76/0.79, respectively. The outcomes of the Ba₂CaTeO₆ and Ba₂CaWO₆ double perovskite show that these materials are More >

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W. W. Lu, J. N. Ding, Z. Y. Wang, Y. C. Wei, Y. P. Chen, J. Xu^*
Chalcogenide Letters, Vol.21, No.8, pp. 631-640, 2024, DOI:10.15251/CL.2024.218.631
Abstract Photocatalytic synthesis of hydrogen peroxide offers an effective solution to the energy crisis. The design and development of high-activity and low-cost photocatalysts are crucial for H₂O₂ production. In this work, Zn_0.4Cd_0.6S with abundant S vacancies (S_V-ZCS) is developed for H₂O₂ photosynthesis under 405 nm LED illumination without additional cocatalysts. The S vacancies serve as photo-generated electron trap centers, effectively extending the lifetimes of photogenerated carriers and promoting the separation of photoelectric carriers. Additionally, S_V-ZCS is endowed with enhanced light capture capability, enhancing the overall photocatalytic activity for H₂O₂ production. The results were in line with expectations, the S_V-ZCS samples More >

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D. N. Alhilfi^a,*, A. S. Al-Kabbib^b
Chalcogenide Letters, Vol.21, No.8, pp. 641-649, 2024, DOI:10.15251/CL.2024.218.641
Abstract The electrochemical deposition method created a CdSe thin film on FTO glass substrates. The film was examined using field scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction, Raman spectroscopy, and optical and electrochemical measurements. The results show that the CdSe nanoparticles were evenly distributed on the substrate, with a Cd/Se ratio of 63.30% Se and 36.70% Cd. The XRD revealed a polycrystalline, hexagonal structure. The film is n-type semiconductor concentration with a carrier concentration of 1.194×10²⁰ cm^-3 . The CdSe showed 552.5 mF/cm² of specific capacity with energy and a power density of 2.5 mW/cm² and 9000 mW/cm² More >

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A. Skender^a, A. Aissat^a,b,c,*, J. P. Vilcot^c
Chalcogenide Letters, Vol.21, No.8, pp. 651-663, 2024, DOI:10.15251/CL.2024.218.651
Abstract The use of semiconductors based on abundant and less expensive materials in photovoltaic industry has grown since electricity consumption has increased, alloys such as Cu₂ZnSn(S_1-xSe_x)₄ have recently attracted attention, due to its structural, optical and electronic properties which make it a very promising candidate as an absorber layer in photovoltaic applications. The lattice mismatch of Cu₂ZnSn(S_1-xSe_x)₄ with Cu2NiGeS4 as substrate for solar cell architecture reveals that low Se content (0.1≤x≤0.4) is favorable, and thus, by reducing Se content from 40 to 10% induces a decrease in optical parameters such as refractive index from 5.475 to 3.834 More >

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F. L. Kong^a,b, L. Zhang^c, W. J. Zhao^d, D. S. Zheng^b, T. J. Sui^b, G. L. Zhu^a, C. A. Guo^a,*
Chalcogenide Letters, Vol.21, No.8, pp. 665-674, 2024, DOI:10.15251/CL.2024.218.665
Abstract A Ni/C-MoS₂ coating was electrospark deposited by using an electrode made of sinered Ni-C-MoS₂ composite on a CrNi3MoVA steel substrate, and its nano-mechanical properties and tribological properties were obtained by utilizing nano-indenter and friction-abrasion testing machine. The results showed that the phase constitution of the as-deposited Ni/C-MoS₂ coating mainly includes graphite, MoS₂, γ-Ni, MoO₂, NixS and MoC. Compared with the CrNi3MoVA steel and Ni/MoS2 coating, the Ni/C-MoS₂ coating exhibits better tribological properties due to the matrix strengthened by MoO₂ and MoC, and the synergistic lubrication effect of graphite and MoS₂ in the Ni/C-MoS₂ coating. More >

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N. A. Jahan^*, S. I. Parash, Md. Asif Hossain, T. Chowdhury
Chalcogenide Letters, Vol.21, No.8, pp. 675-686, 2024, DOI:10.15251/CL.2024.218.675
Abstract In this study, the primary focus was on enhancing the performance of Photovoltaic devices by modifying the ETL and HTL transport layers. We conducted a comprehensive analysis of efficiency and fill factor variations resulting from adjustments in key device parameters, notably the active layer` thickness. The HTL layer employed materials such as CdTe (Cadmium telluride) and CISSe (Copper indium sulfur selenide), while the ETL layer utilized CdS (Cadmium sulfide), ZnO (Zinc oxide), SnOx (Stannous oxalte), SnO₂ (Tin oxide), and TiO₂ (Titanium dioxide). Additionally, Silicon (Si) was incorporated into our structure. Our highest efficiency recorded was 27.38%, More >

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