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Muayed Khaleel Ibrahim1, Shaymaa Hashim Aneed2, Nidhal Saleh Mohammed2, Kareem Ali Jasim2, Mudatheer M. Al-Slivani3,*
Chalcogenide Letters, DOI:10.32604/cl.2026.082607
（This article belongs to the Special Issue: New Horizons in Structural Design and Experimental Synthesis of Chalcogenide-based Materials for Energy Storage and Conversion)
Abstract This study investigates the structural evolution and DC electrical properties of Pb50−xGexTe50 ternary chalcogenide alloys with varying germanium concentrations (x = 5, 10, 15, 20). Synthesized via the melt-quenching technique, the alloys were characterized using Scanning Electron Microscopy (SEM) and temperature-dependent electrical resistivity measurements within the range of 290–475 K. Microstructural analysis revealed that increasing Ge substitution significantly promotes matrix densification, reducing porosity and improving inter-granular connectivity. The DC conductivity exhibits a systematic increase with Ge content up to x = 15, attributed to the increased density of defect states. For instance, as Ge content increases… More >
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