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Navruzbek Habibullayev^1,*, Ilya Yurev^1,2, Maxim Molokeev^1,3,4, Aleksandr Aleksandrovsky^3,5, Olga Trofimova¹, Nikita Shulaev¹, Svetlana Volkova¹, Oleg Andreev^1,6
Chalcogenide Letters, DOI:10.32604/cl.2026.085815
Abstract A novel quaternary selenide, EuErAgSe₃, has been synthesized for the first time. The phase forms upon annealing in the 1120–1800 K range and retains its crystal structure upon cooling to ambient conditions. The phase was prepared by the ampoule method from EuSe and AgErSe₂ powders, followed by annealing at 1270 ± 10 K for up to 300 h. Powder X-ray diffraction revealed that EuErAgSe₃ crystallizes in the AgBiS₂ structure type (space group Fm-3m) with the lattice parameter a = 5.95322(14) Å. The microhardness of the phase is 340 ± 15 HV. The optical band gap for direct transitions More >

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Jierong Gu^1,*, Licheng Hua², Shuangquan Xie^3,4, Xiang Shen^3,4, Tiefeng Xu^3,4, Zijun Liu^3,4
Chalcogenide Letters, DOI:10.32604/cl.2026.086724
Abstract In this work, Ge₄₅As₄₀Se₁₅ chalcogenide glass was prepared using spark plasma sintering. This method synthesizes glass powder into blocks through a certain temperature and pressure, which is an effective densification and high-precision molding of infrared transparent blocks and lenses. Through X-ray diffraction (XRD) and differential scanning calorimetry analysis, we tracked the gradual evolution of the powder during ball milling and observed the existence of a glass transition temperature in the glass after powder hot pressing. This method can prepare components outside the conventional glass forming region with high hardness and infrared transmittance, providing a simple and More >

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Muayed Khaleel Ibrahim¹, Shaymaa Hashim Aneed², Nidhal Saleh Mohammed², Kareem Ali Jasim², Mudatheer M. Al-Slivani^3,*
Chalcogenide Letters, DOI:10.32604/cl.2026.082607
（This article belongs to the Special Issue: New Horizons in Structural Design and Experimental Synthesis of Chalcogenide-based Materials for Energy Storage and Conversion)
Abstract This study investigates the structural evolution and DC electrical properties of Pb_50−xGe_xTe₅₀ ternary chalcogenide alloys with varying germanium concentrations (x = 5, 10, 15, 20). Synthesized via the melt-quenching technique, the alloys were characterized using Scanning Electron Microscopy (SEM) and temperature-dependent electrical resistivity measurements within the range of 290–475 K. Microstructural analysis revealed that increasing Ge substitution significantly promotes matrix densification, reducing porosity and improving inter-granular connectivity. The DC conductivity exhibits a systematic increase with Ge content up to x = 15, attributed to the increased density of defect states. For instance, as Ge content increases… More >

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