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Zhadyra Toreniyaz¹, Guzal Ismailova¹, Oleg Prikhodko¹, Zhasulan Nakysbekov¹, Tilek Kuanyshbekov², Nurkadam Tolep¹, Dmitry Terekhov³, Zhandos Tolepov^1,*
Chalcogenide Letters, Vol.23, No.5, 2026, DOI:10.32604/cl.2026.081101 - 02 June 2026
Abstract Amorphous selenium (a-Se) thin films were deposited by vacuum thermal evaporation and investigated in planar photoconductive structures to evaluate their optical and photoelectrical properties in the low-field regime. SEM analysis showed continuous film coverage with a thickness of about 250 nm. Raman spectroscopy and X-ray diffraction confirmed the amorphous structure of the as-deposited films and the formation of trigonal crystalline selenium after annealing. Optical analysis based on transmission and reflectance spectra yielded an optical band gap E g = 1.96   eV and an Urbach energy E U = 0.083   eV ,… More >

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Tianjing Li^1,*, Min Yao¹, Wei Li¹, Yue Yang¹, Luping Qu¹, Haijun Hou², Hongli Guo³
Chalcogenide Letters, Vol.23, No.5, 2026, DOI:10.32604/cl.2026.080386 - 02 June 2026
Abstract This study focuses on monoclinic system AgSbS₂, employing first-principles methods to calculate the structural, mechanical, optical, and thermodynamic properties. Specifically, geometry optimization yields a stable atomic structure with optimized lattice constants (a = 12.82 Å, b = 4.41 Å, and c = 13.19 Å). Furthermore, electronic structure analysis identifies AgSbS₂ as a direct bandgap semiconductor with a bandgap of 1.456 eV, where the valence and conduction bands primarily originate from Ag-4d, S-3s, and Sb-5p states. Regarding the elastic properties, the calculated elastic constants, combined with Pugh’s B/G criterion, reveal excellent ductility. As for the optical properties, the static More >

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Seham Hassan Salman¹, Sarmad Mahdi Ali¹, Hawraa Hadi^2,*, Dhufr Hadi³
Chalcogenide Letters, Vol.23, No.5, 2026, DOI:10.32604/cl.2026.081302 - 02 June 2026
Abstract Films of (SnS) with a thickness of 400 nm were deposited by the thermal evaporation technique to investigate the influence of annealing temperature on their Physics and CO₂ gas-sensing characteristics. The deposited films were annealed at 200, 300, and 400°C. Structural characterization was performed using XRD, and the obtained results revealed that all samples possessed an orthorhombic crystal structure with a preferred orientation (301). The annealing treatment significantly improved the crystallinity of the films and reduced structural defects and lattice strain. Surface morphology investigations were performed using atomic force microscopy (AFM), which revealed noticeable modifications in… More >

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Yulong Lian¹, Ruiqiang Wang¹, Ziyan Ding¹, Jinyang Liu^1,2,3,*
Chalcogenide Letters, Vol.23, No.5, 2026, DOI:10.32604/cl.2026.083268 - 02 June 2026
Abstract The morphological regularity, thickness uniformity, and size controllability of two-dimensional materials play a crucial role in regulating their physicochemical properties. However, achieving a synergistic balance among these three factors remains a key challenge in the field. In this study, through a systematic investigation of 36 salt-assisted growth systems, we discovered that CsCl promotes the lateral growth of SnS₂, while KI optimizes the crystal morphology. Using a CsCl/KI mixed salt system, we successfully grew triangular, ultrathin, large-area SnS₂ nanosheets with a size exceeding 200 μm and a thickness of only 1.8 nm. Angle-resolved polarized Raman spectroscopy (ARPRS)… More >

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S. D. Al-Sahafi^*
Chalcogenide Letters, Vol.23, No.5, 2026, DOI:10.32604/cl.2026.082364 - 02 June 2026
（This article belongs to the Special Issue: Chalcogenide Thin Films and Solar Cells for Optoelectronic Applications)
Abstract In this study, a lead-free double perovskite solar cell structure based on Cs₂BiAgI₆ was simulated and optimized to enhance photovoltaic performance. The device architecture follows the configuration: ITO/PCBM/C₆₀/Cs₂BiAgI₆/CdTe/Au. The thicknesses of the electron transport layer (ETL), absorber layer, and hole transport layer (HTL) are systematically optimized to evaluate their impact on key performance parameters. The results indicate that optimal performance is achieved with 600 nm thicknesses for all ETLs and HTL, and 2 μm for the Cs₂BiAgl₆ absorber. Under these conditions, the device exhibits a short-circuit current density of 23.23 mA/cm², an open-circuit voltage of 1.08 V, More >

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Yuanyi Zhang, Yang Gu, Yuxin Lan, Zhenyu Wang, Wei Yan, Yingcong Wei, Jing Xu^*
Chalcogenide Letters, Vol.23, No.5, 2026, DOI:10.32604/cl.2026.082986 - 02 June 2026
（This article belongs to the Special Issue: Chalcogenide Materials for Sustainable Environment)
Abstract Photocatalytic H₂O₂ synthesis from O₂ is a green and environmentally friendly route. However, due to the limitations of quick recombination of photogenerated electrons and limited O₂ activation ability, photocatalytic reactions often exhibit low efficiency. In this study, Zn vacancy-engineered Zn_0.4Cd_0.6S (Zn_V-ZCS) photocatalysts were successfully constructed via a hydrothermal strategy using L-cysteine as a coordination agent. The optimized Zn_V-ZCS-10 catalyst achieves an impressive H₂O₂ production rate of 44.39 mmol/g within 1 h under 425 nm irradiation, approximately 2.3 times higher than that of pristine Zn_0.4Cd_0.6S (ZCS). Structural characterization and cycling performance tests confirm that the introduction of Zn vacancies does More >

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