Open Access

ARTICLE

Muayed Khaleel Ibrahim¹, Shaymaa Hashim Aneed², Nidhal Saleh Mohammed², Kareem Ali Jasim², Mudatheer M. Al-Slivani^3,*
Chalcogenide Letters, Vol.23, No.7, 2026, DOI:10.32604/cl.2026.082607 - 07 August 2026
（This article belongs to the Special Issue: New Horizons in Structural Design and Experimental Synthesis of Chalcogenide-based Materials for Energy Storage and Conversion)
Abstract This study investigates the structural evolution and DC electrical properties of Pb_50−xGe_xTe₅₀ ternary chalcogenide alloys with varying germanium concentrations (x = 5, 10, 15, 20). Synthesized via the melt-quenching technique, the alloys were characterized using Scanning Electron Microscopy (SEM) and temperature-dependent electrical resistivity measurements within the range of 290–475 K. Microstructural analysis revealed that increasing Ge substitution significantly promotes matrix densification, reducing porosity and improving inter-granular connectivity. The DC conductivity exhibits a systematic increase with Ge content up to x = 15, attributed to the increased density of defect states. For instance, as Ge content increases… More >

View

345

Download

63

Open Access

ARTICLE

M. Irshad Ahamed^1,*, P. J. Suresh Babu², R. Lal Raja Singh³, S. Sivamani², R. Leena Rose⁴
Chalcogenide Letters, Vol.23, No.7, 2026, DOI:10.32604/cl.2026.084991 - 07 August 2026
Abstract Semiconductor quantum dots (QDs) with tunable narrow bandgaps have emerged as promising materials for next-generation near-infrared (NIR) optoelectronic and photovoltaic devices because their optical properties can be tailored through composition and quantum confinement. Among IV–VI chalcogenide nanomaterials, quaternary alloy systems provide greater compositional flexibility than conventional binary and ternary counterparts; however, PbSnSeS quantum dots remain largely unexplored despite their potential for broadband infrared applications. Here, the structural, electronic, and optical properties of PbSnSeS quaternary QDs synthesized by a one-pot colloidal hot-injection method are systematically investigated. The crystalline IV–VI chalcogenide phase and successful quaternary alloy formation… More >

View

90

Download

21

Open Access

ARTICLE

Navruzbek Habibullayev^1,*, Ilya Yurev^1,2, Maxim Molokeev^1,3,4, Aleksandr Aleksandrovsky^3,5, Olga Trofimova¹, Nikita Shulaev¹, Svetlana Volkova¹, Oleg Andreev^1,6
Chalcogenide Letters, Vol.23, No.7, 2026, DOI:10.32604/cl.2026.085815 - 07 August 2026
Abstract A novel quaternary selenide, EuErAgSe₃, has been synthesized for the first time. The phase forms upon annealing in the 1120–1800 K range and retains its crystal structure upon cooling to ambient conditions. The phase was prepared by the ampoule method from EuSe and AgErSe₂ powders, followed by annealing at 1270 ± 10 K for up to 300 h. Powder X-ray diffraction revealed that EuErAgSe₃ crystallizes in the AgBiS₂ structure type (space group Fm-3m) with the lattice parameter a = 5.95322(14) Å. The microhardness of the phase is 340 ± 15 HV. The optical band gap for direct transitions More >

View

161

Download

36

Open Access

ARTICLE

Jierong Gu^1,*, Licheng Hua², Shuangquan Xie^3,4, Xiang Shen^3,4, Tiefeng Xu^3,4, Zijun Liu^3,4
Chalcogenide Letters, Vol.23, No.7, 2026, DOI:10.32604/cl.2026.086724 - 07 August 2026
Abstract In this work, Ge₄₅As₄₀Se₁₅ chalcogenide glass was prepared using spark plasma sintering. This method synthesizes glass powder into blocks through a certain temperature and pressure, which is an effective densification and high-precision molding of infrared transparent blocks and lenses. Through X-ray diffraction (XRD) and differential scanning calorimetry analysis, we tracked the gradual evolution of the powder during ball milling and observed the existence of a glass transition temperature in the glass after powder hot pressing. This method can prepare components outside the conventional glass forming region with high hardness and infrared transmittance, providing a simple and More >

View

104

Download

22

Open Access

ARTICLE

Bilal Taher^*
Chalcogenide Letters, Vol.23, No.7, 2026, DOI:10.32604/cl.2026.085371 - 07 August 2026
Abstract Nanopowder copper sulphide CuS has been synthesised successfully via the chemical bath deposition method. Two samples of precipitated CuS nanopowder were prepared at molar concentration of 0.5 M from [CuSO₄·5H₂O and Na₂S₂O₃·5H₂O] and 0.05 M from [Na₂EDTA·2H₂O]. Both samples were annealed at 150°C for one hour in air. The effects of washing and nonwashing on the structural, morphological, and compositional properties were studied. The X-ray diffraction (XRD) patterns showed that both samples have a CuS hexagonal structure with lattice constants (a = 3.773 Å , c = 16.398 Å ), and (a =… More >

View

64

Download

15

Open Access

Qizheng Liu, Cong Chen^*
Chalcogenide Letters, Vol.23, No.7, 2026, DOI:10.32604/cl.2026.087725 - 07 August 2026
Abstract The power conversion efficiency of perovskite solar cells has increased rapidly; however, interfacial-defect-induced non-radiative recombination, ion migration, and sensitivity to moisture, oxygen, and thermal stress continue to cause open-circuit voltage losses and a limited operational lifetime. Owing to its tunable energy levels, high carrier mobility, and compact hydrophobic layered structure, two-dimensional MoS₂ can serve as an electron or hole transport layer, an interfacial buffer layer, or an additive, enabling favorable energy-level alignment and optimized interfacial charge-transfer kinetics, thereby promoting carrier extraction and suppressing recombination. The sulfur sites of MoS₂ can coordinate with undercoordinated Pb²⁺ to form Pb–S… More >

Graphic Abstract

View

193

Download

62

Open Access

ARTICLE

Changlim Woo¹, Abdelkader Abderrahmane², Pan Gum Jung³, Pil Ju Ko^1,*
Chalcogenide Letters, Vol.23, No.7, 2026, DOI:10.32604/cl.2026.085424 - 07 August 2026
Abstract Transition metal dichalcogenides (TMDs) and transition metal trichalcogenides (TMTCs) exhibit tunable electronic properties, and when stacked together in their two dimensional (2D) forms, they can display distinctive electronic properties beyond those of conventional heterostructures. In this study, we fabricated for the first time junction field effect transistor (JFET) by stacking MoSe₂, a transition metal dichalcogenide (TMD), with ZrSe₃, a transition metal trichalcogenide (TMTC). We characterized its electrical properties, where the device’s electrical characteristics were analyzed based on the stacking sequence. Two device configurations top-gate and bottom-gate JFETs were fabricated and systematically analyzed. Notably, the top-gate JFET More >

View

69

Download

15