Home / Journals / CL / Vol.20, No.9, 2023
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  • Open AccessOpen Access

    ARTICLE

    The effects of thickness and doping concentration on the solar efficiency of GaN/p-Si based solar cells

    N. S. Khairuddina, M. Z. Mohd Yusoffa,*, H. Hussinb
    Chalcogenide Letters, Vol.20, No.9, pp. 629-637, 2023, DOI:10.15251/CL.2023.209.629
    Abstract In this study, we used the PC1D simulator to demonstrate the performance analysis of a solar cell model based on gallium nitride (GaN). It has been discovered that when the layer thickness of the GaN substrate grows, the efficiency of solar cells decreases. This was found by comparing the doping concentration and layer thickness on the GaN and silicon substrates. As the thickness of the p-doping Si layer rises, cell efficiency increases just modestly. The optimal doping concentrations for GaN and p-silicon are 1x1018 cm-3 and 1x1017 cm-3 , respectively. In compared to other designs, GaN/p-silicon solar More >

  • Open AccessOpen Access

    ARTICLE

    Rational design of MoS2 nanosheet/ MoS2 nanowire homostructures and their enhanced hydrogen evolution reaction

    L. Yang*, X. Q. Yuan, R. Y. Liu, R. X. Song, Q. W. Wang, W. Liang
    Chalcogenide Letters, Vol.20, No.9, pp. 639-648, 2023, DOI:10.15251/CL.2023.209.639
    Abstract In this paper, we report a facile method for the synthesis of MoS2 nanosheet/ MoS2 nanowire homostructures by growing MoS2 nanosheets on the surface of MoS2 nanowires. Benefiting from the uniform coating of MoS2 nanosheets on the surface of MoS2 nanowires, the MoS2 nanosheet/ MoS2 nanowire homostructures highly expose their electrocatalytic active edge sites and exhibit an enhanced electrocatalytic performance. It demonstrates a low overpotential of 107 mV at 10 mA/cm2 and a small Tafel slope of 64 mV/dec in 0.5 M H2SO4. This work provides an inspiration for the design of efficient electrocatalysts with no stacking and aggregation More >

  • Open AccessOpen Access

    ARTICLE

    Calculation of the localized and extended energy states density for Ge60Se40-xTex alloy prepared by melting point method

    J. H. Azzawia, B. A. Ahmedb, K. A. Jasimb, E. M. T. Salmanb,*
    Chalcogenide Letters, Vol.20, No.9, pp. 649-656, 2023, DOI:10.15251/CL.2023.209.649
    Abstract The DC electrical conductivity properties of Ge60Se40-xTex alloy with x = 0, 5, 10, 15 and 20). The samples were formed in the form of discs with the thickness of 0.25–0.30 cm and the diameter of 1.5 cm. Samples were pressed under a pressure of 6 tons per cm2 , using a ton hydraulic press. They were prepared after being pressed using a ton hydraulic press using a hydraulic press. Melting point technology use to preper the samples. Continuous electrical conductivity properties were recorded from room temperature to 475 K. Experimental data indicates that glass containing… More >

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