The effects of thickness and doping concentration on the solar efficiency of GaN/p-Si based solar cells
N. S. Khairuddina, M. Z. Mohd Yusoffa,*, H. Hussinb
Chalcogenide Letters, Vol.20, No.9, pp. 629-637, 2023, DOI:10.15251/CL.2023.209.629
Abstract In this study, we used the PC1D simulator to demonstrate the performance analysis of a
solar cell model based on gallium nitride (GaN). It has been discovered that when the layer
thickness of the GaN substrate grows, the efficiency of solar cells decreases. This was
found by comparing the doping concentration and layer thickness on the GaN and silicon
substrates. As the thickness of the p-doping Si layer rises, cell efficiency increases just
modestly. The optimal doping concentrations for GaN and p-silicon are 1x1018
cm-3
and
1x1017
cm-3
, respectively. In compared to other designs, GaN/p-silicon solar More >