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    ARTICLE

    Thermodynamic properties of chalcogenide and pnictide ternary tetrahedral semiconductors

    S. Pala, D. Sharmab, M. Chandrac, M. Mittald, P. Singhe, M. Lalf, A. S. Vermag,h,*
    Chalcogenide Letters, Vol.21, No.1, pp. 1-9, 2024, DOI:10.15251/CL.2024.211.1
    Abstract In this paper, we present thermodynamic properties such as heat of formation, heat of fusion and entropy of fusion for chalcopyrite structured solids with the product of ionic charges and nearest neighbour distance d (Å). The heat of formation (∆Hf) of these compounds exhibit a linear relationship when plotted on a log-log scale against the nearest neighbour distance d (Å), but fall on different straight lines according to the ionic charge product of the compounds. On the basis of this result two simple heat of formation (∆Hf)——heat of fusion (∆HF), and heat of formation (∆Hf)——entropy of fusion… More >

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    ARTICLE

    Er3+-doped SiO2-TeO2-ZnO-Na2O thin film fabricated by ultrafast laser plasma doping under different ambient atmospheres

    S. A. Kamila,b,*, G. Josec
    Chalcogenide Letters, Vol.21, No.1, pp. 11-20, 2024, DOI:10.15251/CL.2024.211.11
    Abstract Er3+-ions doped SiO2-ZnO-Na2O thin films were fabricated using ultrafast laser plasma doping (ULPD) techniques under different ambient atmospheres; vacuum, nitrogen, oxygen and argon gas. The thickness of the layer produced depends on the ambient atmosphere during fabrication. The layer fabricated under a vacuum is the thinnest among all of the samples. In addition, the surface layer for the sample fabricated under a vacuum environment seems to be relatively smoother compared with those of the others. XRD patterns show that all samples are in a mixed amorphous-crystalline phase. All the Raman spectra exhibited a similar pattern, except More >

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    ARTICLE

    Kinetics of thermally induced processes in Ag doped As40Se30Te30 chalcogenide glass

    R. Vigia, G. R. Štrbaca, D. D. Štrbacb,*, O. Bošákc, M. Kublihac
    Chalcogenide Letters, Vol.21, No.1, pp. 21-37, 2024, DOI:10.15251/CL.2024.211.21
    Abstract The processes of glass-transition and crystallization of chalcogenide glass As40Se30Te30 with 5 at.% silver were analyzed using differential scanning calorimetry. The values of glass-transition temperatures and activation energy were determined. Two crystallization processes were also detected and three-dimensional growth. Using non-isoconversional models the activation energies for both processes amounted to 112(2) kJ/mol and 97(2) kJ/mol. Isoconversional models were used to track changes in activation energy. The presence of Te significantly affects the thermal parameters as well as the structure of the glass while the presence of Ag does not significantly change the degree of connectivity of More >

  • Open AccessOpen Access

    ARTICLE

    Theoretical study on the elastic and thermodynamic properties of CdS

    G. Haoa,*, H. J. Houa, S. R. Zhangb, L. H. Xiec
    Chalcogenide Letters, Vol.21, No.1, pp. 39-51, 2024, DOI:10.15251/CL.2024.211.39
    Abstract The physical properties of CdS is calculated by using the first principles pseudopotential plane wave method based on density functional theory (DFT). The calculated lattice parameters and elastic constants agree well with other theoretical values, and the crystal is determined to be structurally stable by the Born mechanical stability condition. The Debye temperature, Grüneisen parameters, heat capacity and thermal expansion coefficient of CdS under high temperature and high pressure were studied successfully by using the quasi-harmonic Debye model. The influence of pressure on thermal expansion coefficient and Debye temperature is greater than that of temperature. More >

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    ARTICLE

    DFT insights on the Be1-xCrxS alloys for optoelectronic and magnetic devices

    N. Kanwala, M. Ishfaqa, S. A. Aldaghfagb, S. Saleema, M. Yaseena,*
    Chalcogenide Letters, Vol.21, No.1, pp. 53-63, 2024, DOI:10.15251/CL.2024.211.53
    Abstract In this work, the electro-optical and magnetic characteristics of Be1-xCrxS (x= 6.25%, 12.5% and 25%) are brought into investigation by employing full potential linearized augmented plane wave (FP-LAPW) scheme designed within density functional theory (DFT). The stability of the Be1-xCrxS alloy is justified by the negative values of formation energy. The band structures and density of states are examined by using GGA functional. Be1-xCrxS compound demonstrates the half-metallic (HM) ferromagnetic behavior for all doping concentrations; spin-up channel reveals the metallic character and other spin version displays the semiconductor (SC) behavior. The values of total magnetic moment (µB) More >

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    ARTICLE

    Thermal stability and crystallization kinetic of Se-Te-Ag glassy alloys and thick films for electronic devices

    K. I. Hussaina, A. Ashourb, E. S. Yousefc, E. R. Shaabanb,d,*
    Chalcogenide Letters, Vol.21, No.1, pp. 65-80, 2024, DOI:10.15251/CL.2024.211.65
    Abstract The present work has examined the thermal features of glassy chacogenide materials Se0.75-xTe0.25Agx (x = 0, 2, 4, 6, 8, 10 at %). The thermal stability of these compositions has been assessed under non-isothermal conditions using Differential Scanning Calorimetry (DSC), which has been used to find the glass transition temperature (Tg), the initial crystallization temperature (Tin), the temperature corresponding to the top of the crystallization rate (Tp), and the melting temperature (Tm). In addition, the kinetic parameter Kr(T) was given as an additional sign of thermal stability. Among these compositions, it was discovered that Se0.71Te0.25Ag0.04… More >

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    ARTICLE

    Performance of high sensitive heterojunction CuS/porous silicon photodetector

    A. A. Ahmeda, G. G. Alib,*, N. A. Dahama
    Chalcogenide Letters, Vol.21, No.1, pp. 81-97, 2024, DOI:10.15251/CL.2024.211.81
    Abstract In this work, copper sulfide (CuS) nanostructure was deposited on a porous silicon wafer for the visible light by spray pyrolysis method. Through this, a series of devices were suggested as a part of the deposit concentration of CuS on n-type porous silicon. Simultaneously, the physical features of the attained film were illustrated. FESEM exhibited that the average nanoparticle diameter increased with the concentration of CuS at orientation (100) and was found to be 47.84 nm, 56.36nm and 71.32nm, while the average diameter at (111) orientation was found to be 37.64 nm, 41.46nm, 55.22 nm… More >

  • Open AccessOpen Access

    ARTICLE

    Effect of annealing temperature on the structural and optical properties of vacuum evaporated Cu13Se52Bi35 thin films

    A. B. Alwanya,*, A. Alnakhlania,b, B. Hassana,b, M. A. Algradeea, R. A. Fouadb, A. A. Alfaqeerc
    Chalcogenide Letters, Vol.21, No.1, pp. 99-112, 2024, DOI:10.15251/CL.2024.211.99
    Abstract Thermal evaporation technique was used to prepare Cu13Se52Bi35 thin films. The asdeposited and annealed samples were investigated by using the X-ray diffraction (XRD), scanning electron microscopy (SEM) and optical transmission and reflection. The XRD showed that the as-deposited film is crystalline in nature, and the crystalline size of samples increased with increasing the annealing temperature. SEM images showed that the morphology of the sample changes with the annealing temperature. The direct transition of the optical band gap (Eg) of Cu13Se52Bi35 films was observed and the values of Eg decreased with increasing the annealing temperature. Other optical parameters More >

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